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Researcher profile

G. M. Minkov

G. M. Minkov contributes to research discovery and scholarly infrastructure.

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cond-mat.dis-nncond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

8 published item(s)

preprint2020arXiv

Magneto-intersubband oscillations in two dimensional systems with energy spectrum split due to spin-orbit interaction

In the present paper we study magneto-intersubband oscillations (MISO) in HgTe/Hg$_{1-x}$Cd$_x$Te single quantum well with "inverted" and "normal" spectra and in conventional In$_{1-x}$Ga$_x$As/In$_{1-y}$Al$_y$As quantum wells with normal band ordering. For all the cases when two branches of the spectrum arise due to spin-orbit splitting, the mutual arrangement of the antinodes of the Shubnikov-de Haas oscillations and the maxima of MISO occurs opposite to that observed in double quantum wells and in wide quantum wells with two subbands occupied and does not agree with the theoretical predictions. A "toy" model is supposed that explain qualitatively this unusual result.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Aniotropy of in-plane g-factor of electrons in HgTe quantum wells

The results of experimental studies of the Shubnikov-de Haas (SdH) efect in the (013)-HgTe/Hg$_{1-x}$Cd$_x$Te quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us to investigate the anisotropy of the Zeeman effect. For the QWs with inverted spectrum, it has been shown that the ratio of the spin splitting to the orbital one is strongly dependent not only on the orientation of the magnetic field relative to the QW plane but also on the orientation of the in-plane magnetic field component relative to crystallographic axes laying in the QW plane that implies the strong anisotropy of in-plane g-factor. In the QW with normal spectrum, this ratio strongly depends on the angle between the magnetic field and the normal to the QW plane and reveals a very slight anisotropy in the QW plane. To interpret the data, the Landau levels in the tilted magnetic field are calculated within the framework of four-band \emph{kP} model. It is shown that the experimental results can be quantitatively described only with taking into account the interface inversion asymmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Density of states measurements for heavy subband of holes in HgTe quantum wells

Valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the $Γ$ point and poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in the reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Weak antilocalization in HgTe quantum well with inverted energy spectrum

The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is shown that only the antilocalization magnetoconductivity is observed at the relatively high conductivity $σ>(20-30)G_0$, where $G_0= e^2/2π^2\hbar$. The antilocalization correction demonstrates a crossover from $0.5\ln{(τ_ϕ/τ)}$ to $1.0\ln{(τ_ϕ/τ)}$ behavior with the increasing conductivity or decreasing temperature (here $τ_ϕ$ and $τ$ are the phase relaxation and transport relaxation times, respectively). It is interpreted as a result of crossover to the regime when the two chiral branches of the electron energy spectrum contribute to the weak antilocalization independently. At lower conductivity $σ<(20-30)G_0$, the magnetoconductivity behaves itself analogously to that in usual 2D systems with the fast spin relaxation: being negative in low magnetic field it becomes positive in higher one. We have found that the temperature dependences of the fitting parameter $τ_ϕ$ corresponding to the phase relaxation time demonstrate reasonable behavior, close to 1/T, over the whole conductivity range from $5G_0$ up to $130G_0$. However, the $τ_ϕ$ value remains practically independent of the conductivity in distinction to the conventional 2D systems with the simple energy spectrum, in which $τ_ϕ$ is enhanced with the conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Interaction correction to the conductivity of two-dimensional electron gas in In$_x$Ga$_{1-x}$As/InP quantum well structure with strong spin-orbit coupling

The electron-electron interaction quantum correction to the conductivity of the gated single quantum well InP/In$_{0.53}$Ga$_{0.47}$As heterostructures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for different values of spin relaxation rate, $1/τ_s$. The surprising result is that the spin relaxation processes do not suppress the interaction correction in the triplet channel and, thus, do not enhance the correction in magnitude contrary to theoretical expectations even in the case of relatively fast spin relaxation, $1/Tτ_s\simeq (20-25)\gg 1$.

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preprint2010arXiv

Analysis of homogeneity of 2D electron gas at decreasing of electron density

We investigate the gate voltage dependence of capacitance of a system gate - 2D electron gas (C-Vg). The abrupt drop of capacitance at decreasing concentration was found. The possible reasons of this drop, namely inhomogeneity of electron density distribution and serial resistance of 2D electron gas are discussed. Simultaneous analysis of gate voltage dependences of capacitance and resistance has shown that in heavily doped 2D systems the main role in the drop of capacitance at decreasing concentration plays the resistance of 2D gas. It is found that the investigated systems remains homogeneous down to the low temperature conductivity about (10^-2-10^-3)e^2/h.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime, for k_BTτ/\hbar>1. The MR grows with field and exhibits a maximum at fields B>1/μ, where μis the electron mobility. As temperature increases the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs- based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field, and found qualitative similarities and discrepancies.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Weak antilocalization in quantum wells in tilted magnetic fields

Weak antilocalization is studied in an InGaAs quantum well. Anomalous magnetoresistance is measured and described theoretically in fields perpendicular, tilted and parallel to the quantum well plane. Spin and phase relaxation times are found as functions of temperature and parallel field. It is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit interaction. The values of electron spin splittings and spin relaxation times are found in the wide range of 2D density. Application of in-plane field is shown to destroy weak antilocalization due to competition of Zeeman and microroughness effects. Their relative contributions are separated, and the values of the in-plane electron g-factor and characteristic size of interface imperfections are found.

0 citations0 reviewsNo code linkedOpen access