BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

B. Beschoten

B. Beschoten appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-ph

Catalog footprint

What is connected

23works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

23 published item(s)

preprint2022arXiv

Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals

To conduct spin-sensitive transport measurements, a non-local device geometry is often used to avoid spurious voltages that are caused by the flow of charges. However, in the vast majority of reported non-local spin valve, Hanle spin precession, or spin Hall measurements background signals have been observed that are not related to spins. We discuss seven different types of these charge-induced signals and explain how these artifacts can result in erroneous or misleading conclusions when falsely attributed to spin transport. The charge-driven signals can be divided into two groups: Signals that are inherent to the device structure and/or the measurement setup and signals that depend on a common-mode voltage. We designed and built a voltage-controlled current source that significantly diminishes all spurious voltage signals of the latter group in both DC and AC measurements by creating a virtual ground within the non-local detection circuit. This is especially important for lock-in-based measurement techniques, where a common-mode voltage can create a phase-shifted, frequency-dependent signal with an amplitude several orders of magnitude larger than the actual spin signal. Measurements performed on graphene-based non-local spin valve devices demonstrate how all spurious voltage signals that are caused by a common-mode voltage can be completely suppressed by such a current source.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

CVD bilayer graphene spin valves with 26 $μ$m spin diffusion length at room temperature

We present inverted spin-valves fabricated from CVD-grown bilayer graphene (BLG) that show more than a doubling in device performance at room temperature compared to state-of-the art bilayer graphene spin-valves. This is made possible by a PDMS droplet-assisted full-dry transfer technique that compensates for previous process drawbacks in device fabrication. Gate-dependent Hanle measurements show spin lifetimes of up to 5.8 ns and a spin diffusion length of up to 26 $μ$m at room temperature combined with a charge carrier mobility of $\approx$ 24 000 cm$^{2}$(Vs)$^{-1}$ for the best device. Our results demonstrate that CVD-grown BLG shows equally good room temperature spin transport properties as both CVD-graphene and even exfoliated single-layer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5° and 8° when using a green excitation laser. The twist angles can directly be extracted from the moiré superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fractional quantum Hall effect in CVD-grown graphene

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $ν^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

How the dynamic of photo-induced gate screening complicates the investigation of valley physics in 2D materials

An in-depth analysis of valley physics in 2D materials like transition metal dichalcogenides requires the measurement of many material properties as a function of Fermi level position within the electronic band structure. This is normally done by changing the charge carrier density of the 2D material via the gate electric field effect. Here, we show that a comparison of gate-dependent measurements, which were acquired under different measurement conditions can encounter significant problems due to the temporal evolution of the charging of trap states inside the dielectric layer or at its interfaces. The impact of, e.g., the gate sweep direction and the sweep rate on the overall gate dependence gets especially prominent in optical measurements due to photo-excitation of donor and acceptor states. Under such conditions the same nominal gate-voltage may lead to different gate-induced charge carrier densities and, hence, Fermi level positions. We demonstrate that a current flow from or even through the dielectric layer via leakage currents can significantly diminish the gate tunability in optical measurements of 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport

We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80 $μ$eV by the displacement field. We assign this gate-tunable subband-splitting to a gap induced by spin-orbit coupling of Kane-Mele type, enhanced by proximity effects due to the substrate. We show that this spin-orbit coupling gives rise to a complex pattern in low perpendicular magnetic fields, increasing the Zeeman splitting in one valley and suppressing it in the other one. In addition, we observe the existence of a spin-polarized channel of 6 e$^2$/h at high in-plane magnetic field and of signatures of interaction effects at the crossings of spin-split subbands of opposite spins at finite magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Coherent Electron Zitterbewegung

Zitterbewegung is a striking consequence of relativistic quantum mechanics which predicts that free Dirac electrons exhibit a rapid trembling motion even in the absence of external forces. The trembling motion of an electron results from the interference between the positive and the negative-energy solutions of the Dirac equation, separated by one MeV, leading to oscillations at extremely high frequencies which are out of reach experimentally. Recently, it was shown theoretically that electrons in III-V semiconductors are governed by similar equations in the presence of spin-orbit coupling. The small energy splittings up to meV result in Zitterbewegung at much smaller frequencies which should be experimentally accessible as an AC current. Here, we demonstrate the Zitterbewegung of electrons in a solid. We show that coherent electron Zitterbewegung can be triggered by initializing an ensemble of electrons in the same spin states in strained n-InGaAs and is probed as an AC current at GHz frequencies. Its amplitude is shown to increase linearly with both the spin-orbit coupling strength and the Larmor frequency of the external magnetic field. The latter dependence is the hallmark of the dynamical generation mechanism of the oscillatory motion of the Zitterbewegung. Our results demonstrate that relativistic quantum mechanics can be studied in a rather simple solid state system at moderate temperatures. Furthermore, the large amplitude of the AC current at high precession frequencies enables ultra-fast spin sensitive electric read-out in solids.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Phase-coherent transport in catalyst-free vapor phase deposited Bi$_2$Se$_3$ crystals

Free-standing Bi$_2$Se$_3$ single crystal flakes of variable thickness are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si$^{++}$/SiO$_2$ substrate where the flakes are contacted in Hall bar geometry. Low temperature magneto-resistance measurements are presented which show a linear magneto-resistance for high magnetic fields and weak anti-localization (WAL) at low fields. Despite an overall strong charge carrier tunability for thinner devices, we find that electron transport is dominated by bulk contributions for all devices. Phase coherence lengths $ł_ϕ$ as extracted from WAL measurements increase linearly with increasing electron density exceeding $1 μ$m at 1.7 K. While $ł_ϕ$ is in qualitative agreement with electron electron interaction-induced dephasing, we find that spin flip scattering processes limit $ł_ϕ$ at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices

Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection and detection contacts in a fabricated device. To address this issue, we discuss the influence of spatially inhomogeneous oxide barriers and especially conducting pinholes within the barrier on the background signal in non-local measurements of graphene/MgO/Co spin-valve devices. By both simulations and reference measurements on devices with non-ferromagnetic electrodes, we demonstrate that the background signal can be caused by inhomogeneous current flow through the oxide barriers. As a main result, we demonstrate the existence of charge accumulation next to the actual spin accumulation signal in non-local voltage measurements, which can be explained by a redistribution of charge carriers by a perpendicular magnetic field similar to the classical Hall effect. Furthermore, we present systematic studies on the phase of the low frequency non-local ac voltage signal which is measured in non-local spin measurements when applying ac lock-in techniques. This phase has so far widely been neglected in the analysis of non-local spin transport. We demonstrate that this phase is another hallmark of the homogeneity of the MgO spin injection and detection barriers. We link backgate dependent changes of the phase to the interplay between the capacitance of the oxide barrier to the quantum capacitance of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene

We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_ϕ$ as well as the inter- and intra-valley scattering times $τ_i$ and $τ_*$. While $τ_ϕ$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $τ_ϕ$ at low temperatures. The analysis of $τ_i$ and $τ_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_cA$ values. With increasing $R_cA$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

All-electrical time-resolved spin generation and spin manipulation in n-InGaAs

We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at zero external magnetic field. The first electric field pulse along the $[1\bar10]$ crystal axis creates a current induced spin polarization (CISP) which is oriented in the plane of the sample. The subsequent electric field pulse along [110] generates a perpendicular magnetic field pulse leading to a coherent precession of this spin polarization with 2-dimensional electrical control over the final spin orientation. Spin precession is probed by time-resolved Faraday rotation. We determine the build-up time of CISP during the first field pulse and extract the spin dephasing time and internal magnetic field strength during the spin manipulation pulse.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Role of MgO barriers for spin and charge transport in Co/MgO/graphene non-local spin-valve devices

We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single layer devices. This general trend is only observed in devices with large contact resistances. Furthermore, we observe a second Dirac peak in devices with long spin lifetimes. This results from charge transport underneath the contacts. In contrast, all devices with low ohmic contact resistances only exhibit a single Dirac peak. Additionally, the spin lifetime is significantly reduced indicating that an additional spin dephasing occurs underneath the electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electric field-driven coherent spin reorientation of optically generated electron spin packets in InGaAs

Full electric-field control of spin orientations is one of the key tasks in semiconductor spintronics. We demonstrate that electric field pulses can be utilized for phase-coherent +/- pi spin rotation of optically generated electron spin packets in InGaAs epilayers detected by time-resolved Faraday rotation. Through spin-orbit interaction, the electric-field pulses act as local magnetic field pulses (LMFP). By the temporal control of the LMFP, we can turn on and off electron spin precession and thereby rotate the spin direction into arbitrary orientations in a 2-dimensional plane. Furthermore, we demonstrate a spin echo-type spin drift experiment and find an unexpected partial spin rephasing, which is evident by a doubling of the spin dephasing time.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Frequency domain studies of current-induced magnetization dynamics in single magnetic-layer nanopillars

Spin transfer torque-induced high-frequency dynamics of single thin cobalt-layer nanopillars of circular and elliptical shape have been observed directly. Two types of precessional modes can be identified as a function of magnetic field perpendicular to the layer plane, excited for negative current polarity only. They are assigned to vortex-core and transverse spin-wave excitations, which corroborate recent model predictions. The observed narrow linewidth of 4 MHz at room temperature indicates the high coherence of the magnetic excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intermediate state switching dynamics in magnetic double layer nanopillars grown by molecular beam epitaxy

We observe a stable intermediate resistance switching state in the current perpendicular to plane geometry for all Co/Cu/Co double layer nanopillar junctions grown by molecular beam epitaxy. This novel state has a resistance between the resistances of the parallel and antiparallel alignment of both Co-layer magnetizations. The state, which originates from an additional in-plane magnetic easy axis, can be reached by spin transfer torque switching or by an external magnetic field. In addition to spin torque-induced coherent small-angle spin wave modes we observe a broad microwave emission spectrum. The latter is attributed to incoherent magnetic excitations that lead to a switching between the intermediate state and the parallel or antiparallel alignment of both ferromagnetic layers. We conclude that the additional magnetic easy axis suppresses a stable trajectory of coherent large-angle precession, which is not observed in our samples.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Origin of training effect of exchange bias in Co/CoO due to irreversible thermoremanent magnetization of the magnetically diluted antiferromagnet

The irreversible thermoremanent magnetization of a sole, magnetically diluted epitaxial antiferromagnetic Co$_{1-y}$O(100) layer is determined by the mean of its thermoremanent magnetizations at positive and negative remanence. During hysteresis-loop field cycling, thermoremanent magnetization exhibits successive reductions, consistent with the training effect (TE) of the exchange bias measured for the corresponding Co$_{1-y}$O(100)/Co bilayer. The TE of exchange bias is shown to have its microscopic origin in the TE of the irreversible thermoremanent magnetization of the magnetically diluted AFM.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier

Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin precession of optically created spin packets in n-GaAs can be probed electrically by spin-polarized photo-current pulses. The injection and detection experiments are not direct reciprocals of each other. In particular, we find that interfacial spin accumulation generated by the photocurrent pulse plays a critical role in time-resolved electrical spin detection.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Two-dimensional optical control of electron spin orientation by linearly polarized light in InGaAs

Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly polarized light in InGaAs. By changing the incident linear polarization direction we can selectively excite spins both in polar and transverse directions. These directions can be identified by the phase during spin precession using time-resolved Faraday rotation. We show that the spin orientations do not depend on the crystal axes suggesting an extrinsic excitation mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Asymmetric magnetization reversal in the exchange bias system Fe/FeF_2 studied by MOKE

The asymmetry of the magnetization reversal process in exchange biased Fe/FeF$_2$ has been studied by magneto-optical Kerr effect. Qualitatively different transverse magnetization loops are observed for different directions of the cooling and the measuring field. These loops can be simulated by a simple calculation of the total energy density which includes the relevant magnetic anisotropies and coherent magnetization rotation only. Asymmetric magnetization reversal is shown to originate from the unidirectional anisotropy and may be observed if the external measuring field is not collinear with either the exchange bias or the easy axis of the antiferromagnetic epitaxial FeF$_2$(110) layer.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Magneto-optical study of magnetization reversal asymmetry in exchange bias

The asymmetric magnetization reversal in exchange biased Fe/MnF$_{2}$ involves coherent (Stoner-Wohlfarth) magnetization rotation into an intermediate, stable state perpendicular to the applied field. We provide here experimentally tested analytical conditions for the unambiguous observation of both longitudinal and transverse magnetization components using the magneto-optical Kerr effect. This provides a fast and powerful probe of coherent magnetization reversal as well as its chirality. Surprisingly, the sign and asymmetry of the transverse magnetization component of Fe/MnF$_{2}$ change with the angle between cooling and measurement fields.

0 citations0 reviewsNo code linkedOpen access