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B. Arnaud

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cond-mat.mtrl-sci cond-mat.other cond-mat.str-el

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preprint2016arXiv

Anisotropic thermal expansion of bismuth from first principles

Some anisotropy in both mechanical and thermodynamical properties of bismuth is expected. A combination of density functional theory total energy calculations and density functional perturbation theory in the local density approximation is used to compute the elastic constants at 0 K using a finite strain approach and the thermal expansion tensor in the quasiharmonic approximation. The overall agreement with experiment is good. Furthermore, the anisotropy in the thermal expansion is found to arise from the anisotropy in both the directional compressibilities and the directional Grüneisen functions.

preprint2012arXiv

Electron cooling and Debye-Waller effect in photoexcited bismuth

By means of first principles calculations, we computed the effective electron-phonon coupling constant $G_0$ governing the electron cooling in photoexcited bismuth. $G_0$ strongly increases as a function of electron temperature, which can be traced back to the semi-metallic nature of bismuth. We also used a thermodynamical model to compute the time evolution of both electron and lattice temperatures following laser excitation. Thereby, we simulated the time evolution of (1 -1 0), (-2 1 1) and (2 -2 0) Bragg peak intensities measured by Sciaini et al [Nature 458, 56 (2009)] in femtosecond electron diffraction experiments. The effect of the electron temperature on the Debye-Waller factors through the softening of all optical modes across the whole Brillouin zone turns out to be crucial to reproduce the time evolution of these Bragg peak intensities.

preprint2011arXiv

Coherent Phonon Coupling to Individual Bloch States in Photoexcited Bismuth

We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The binding energy of bulk-like bands oscillates with the frequency of the $A_{1g}$ phonon mode whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electronic wavevector is correctly reproduced by \textit{ab initio} calculations of electron-phonon coupling. Besides these oscillations, all the electronic states also display a photoinduced shift towards higher binding energy whose dynamics follows the evolution of the electronic temperature.

preprint2011arXiv

Entropy driven atomic motion in laser-excited bismuth

We introduce a thermodynamical model based on the two-temperature approach in order to fully understand the dynamics of the coherent A$_{1g}$ phonon in laser-excited bismuth. Using this model, we simulate the time evolution of (111) Bragg peak intensities measured by Fritz {\it{et al}} [Science {\bf 315}, 633 (2007)] in femtosecond X-ray diffraction experiments performed on a bismuth film for different laser fluences. The agreement between theoretical and experimental results is striking not only because we use fluences very close to the experimental ones but also because most of the model parameters are obtained from {\it{ab-initio}} calculations performed for different electron temperatures.

preprint1999arXiv

Implementation of an all-electron GW Approximation using the Projector Augmented Wave method: II. Application to the optical properties of semiconductors

We used our previously implemented GW approximation (GWA) based on the all-electron full-potential projector augmented wave (PAW) method to study the optical properties of small, medium and large-band-gap semiconductors: Si, GaAs, AlAs, InP, Mg$_2$Si, C, and LiCl. The aim being to study the size of both local-field (LF) and the quasi-particle (QP) corrections to the calculated dielectric function obtained using the local density approximation (LDA). We found that while the QP corrections tend to align the calculated structures in the optical spectra with their experimental counterparts, the LF effects don't change these peak positions but systematically reduce the intensities of the so called $E_1$ and $E_2$ structures in all the optical spectra. The reduction of the intensity of the $E_1$ peak worsen the agreement with experiment while that of $E_2$ improves it. We then show that the local-field correction improves considerably the calculated static dielectric constants of all studied semiconductors. Because the static dielectric constant is a ground state property, the remaining discrepancy with experiment should be attributed to the the LDA itself. On the other hand, as expected, the calculation of the static dielectric constant using the GW quasiparticle energies and including the LF effects is underestimated for all the semiconductors. The excitonic effects should then correct for this discrepancy with experiment.