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A. B. Davydov

A. B. Davydov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Resonant indirect exchange via remote 2D channel

We apply the previously developed theory of the resonant indirect exchange interaction to explain the ferromagnetic properties of the hybrid heterostructure consisting of a InGaAs-based quantum well (QW) sandwiched between GaAs barriers with a remote Mn delta-layer. The experimentally obtained dependence of the Curie temperature on the QW depth exhibits a maximum related to the region of resonant indirect exchange. We suggest the theoretical explanantion and a fit to this dependence as a result of the two contributions to ferromagnetism - the intralayer contribution and the resonant exchange contribution provided by the QW.

preprint2012arXiv

Pecularities of Hall effect in GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs (\times {\approx} 0.2) heterostructures with high Mn content

Transport properties of GaAs/δ<Mn>/GaAs/In\timesGa1-\timesAs/GaAs structures containing InxGa1-xAs (\times {\approx} 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness ds = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence Rxx(T) at the temperature {\approx} 46K which is usually associated with the Curie temperature Tc of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than ds is smaller and reaches a giant value pH = (1-2)\cdot10^13 cm^(-2). Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high pH value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.

preprint2010arXiv

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.