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Aymen Ben Hamida

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cond-mat.mes-hall

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preprint2013arXiv

Broadband ferromagnetic resonance characterization of GaMnAs thin films

The precessional magnetization dynamics of GaMnAs thin films are characterized by broadband network analyzer ferromagnetic resonance (FMR) in a coplanar geometry at cryogenic temperatures. The FMR frequencies are characterized as function of in-plane field angle and field amplitude. Using an extended Kittel model of the FMR dispersion the magnetic film parameters such as saturation magnetization and anisotropies are derived. The modification of the FMR behavior and of the magnetic parameters of the thin film upon annealing is analyzed.

preprint2012arXiv

Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions

GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significant perpendicular-to-plane current paths. This effect allows the determination of TMR ratios of MTJs based on a simplified in-plane measurement. However, the same effect can lead to an inaccurate determination of resistance area products and spin torque critical current densities from perpendicular-to-plane magnetotransport experiments on MTJ pillar structures.