BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Awadhesh Mani

Awadhesh Mani appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.mes-hallcond-mat.other

Catalog footprint

What is connected

10works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

10 published item(s)

preprint2023arXiv

Exploring the substrate-driven morphological changes in Nd0.6Sr0.4MnO3 thin films

Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated using the pulsed laser deposition technique. Scanning electron microscopy (SEM) imaging of the thin films revealed two prominent surface morphologies: a granular and a unique crossed-nano-rod-type morphology. From X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis, we found that the observed nanostructures resulted from altered growth modes occurring on the terraced substrate surface. Furthermore, investigations on the electrical-transport properties of thin films revealed that the films with crossed-nano-rod type morphology showed a sharp resistive transition near the metal-to-insulator transition (MIT). An enhanced temperature coefficient of resistance (TCR) of up to one order of magnitude was also observed compared to the films with granular morphology. Such enhancement in TCR % by tuning the morphology makes these thin films promising candidates for developing oxide-based temperature sensors and detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effect of Sb substitution on the Topological Surface States in Bi_{2}Se_{3} single crystals: a magneto-transport study

Magneto-transport measurements have been carried out on Bi2-xSbxSe3 (x = 0, 0.05, 0.1, 0.3, 0.5) single crystals at 4.2 K temperature in the magnetic field range of -15 T to 15 T. Shubnikov-de Haas (SdH) oscillations of 2D nature were observed in samples with Sb concentration upto x = 0.3. The analyses of SdH oscillations observed in magneto-resistance data using Lifshitz-Kosevich equation reveal a systematic decrease in the Fermi surface area with Sb substitution. The Berry phase obtained from the Landau Level fan diagram suggests the occurrence of 2D oscillations arising from a Topological Surface State (TSS) for Sb concentrations of x = 0, 0.05 and 0.1; while 2D oscillation seen at higher Sb concentration is attributed to surface 2D electron gas consequent to downward band bending.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder

Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an upturn at low temperatures in the Te doped samples. Magnetoresistance measurements in Bi2Se3 show clear signatures of Shubnikov de Hass oscillations that gets suppressed in the Te doped samples. In the Bi2SeTe2 sample, the magneto-resistance shows a cusp like positive magneto-resistance at low magnetic fields and low temperatures, a feature associated with weak antilocalisation (WAL), that crosses over to negative magneto-resistance at higher fields. The qualitatively different magnetotransport behaviour seen in Bi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder, through an estimate of the carrier density, carrier mobility and an analysis in terms of the Ioffe Regel criterion with support from Hall Effect measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Studies on proximity effect in Mo/Bi1.95Sb0.05Se3 hybrid structure

Proximity effect in a mechanically exfoliated Bi1.95Sb0.05Se3 topological insulator (TI) single crystal partially covered with disordered superconducting (SC) Mo thin film is reported. Magnetotransport measurement was performed simultaneously across three different regions of the sample viz. SC, TI and SC/TI junction. Resistance measured across SC shows a TC at 4.3 K concomitantly the resistance measurement on TI showed a metallic trend with a steep upturn at TC. Magneto-resistance (MR) measurement on TI exhibit a positive MR with Shubnikov-de Haas (SdH) oscillations, whereas on SC a positive MR superimposed with steep cusp close to TC is observed. Across SC/TI junction both SdH oscillation and the cusp were observed. The frequency of SdH oscillation on SC/TI junction is found to be lesser (~ 125 T) as compared to a reference Bi1.95Sb0.05Se3sample (~ 174 T). Upper critical field HC2 deduced from WHH fit was found to be 17.14 T for a reference Mo film whereas Mo film deposited on TI showed a decreased HC2 of 4.05 T. The coherence length for the former was found to be 4.38 nm and for the latter 9.01 nm. The interaction between the spin-less Cooper pairs in SC with the spin-momentum locked carriers on the surface of TI is believed to cause such changes in transport properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study

Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unification of the Pressure and Composition Dependence of Superconductivity in Ru substituted BaFe2As2

Temperature dependent high pressure electrical resistivity studies has been carried out on Ba(Fe_{1-x}Ru_{x})_{2}As_{2} single crystals with x = 0.12, 0.26 and 0.35, which correspond to under doped, optimally doped and over doped composition regimes respectively. The evolution of structural/magnetic (T_{S-M}) and superconducting transition (T_(c)) temperatures, with pressure for various compositions have been obtained. The normal state resistivity has been analyzed in terms of a model that incorporates both spin fluctuations and the opening of the gap in the spin density wave (SDW)phase. It is shown that Tc scales with the strength of the spin fluctuation, B, and T_{S-M} scales with the SDW gap parameter, Δ. This provides a prescription for the unification of the composition and pressure induced superconductivity in BaFe2As2.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Pressure Induced Metallization of BaMn2As2

The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is indicated by a change in the temperature co-efficient in the rho(T) data at ~36 K . However complete metallization in entire temperature range is seen at a P~5.8 GPa. High pressure XRD studies carried out at room temperature also shows an anomaly in the pressure versus volume curve around P ~ 5 GPa, without a change in crystal structure, indicative of an electronic transition. Further, a clear precipitous drop in rho(T) at ~17 K is seen for P ~5.8 GPa which suggests the possibility of the system going over to a superconducting ground state.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films

Thin films of the half doped manganite Pr0.5Ca0.5MnO3 were grown on (100) oriented MgO substrates by pulsed laser deposition technique. In order to study the effect of strain on the magnetic field induced charge order melting, films of different thicknesses were prepared and their properties were studied by x-ray diffraction, electrical resistivity and magnetoresistance measurements. A field induced charge order melting is observed for films with very small thicknesses. The charge order transition temperature and the magnetic filed induced charge order melting are observed to depend on the nature of strain that is experienced by the film.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Pressure induced superconductivity in BaFe2As2 single crystal

The evolution of pressure induced superconductivity in single crystal as well as polycrystalline samples of BaFe2As2 has been investigated through temperature dependent electrical resistivity studies in 0-7 GPa pressure range. While the superconducting transition remains incomplete in polycrystalline sample, a clear pressure induced superconductivity with zero resistivity at the expense of magnetic transition, associated with spin density wave (SDW), is observed in the single crystal sample. The superconducting transition temperature (TC) is seen to increase upto a moderate pressure of about ~1.5 GPa and decreases monotonically beyond this pressure. The SDW transition temperature TSDW decreases rapidly with increasing pressure and vanishes above ~1.5 GPa.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Superconducting Fe(1+delta)Se(1-x)Te(x) thin films: Growth, characterization and properties

Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray diffraction, and the superconducting properties by electrical resistivity measurements. X-ray diffraction analysis establishes the epitaxial growth of the films with c-axis orientation. Atomic force microscopy showed a smooth surface morphology for the films grown on SrTiO3 substrates. All the films are observed to be superconducting with a Tc of ~ 8-14 K depending on the deposition conditions. The deposition parameters were optimized to obtain good quality films with Tc comparable to that of the target material.

0 citations0 reviewsNo code linkedOpen access