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Awadhesh Mani

Awadhesh Mani contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2023arXiv

Exploring the substrate-driven morphological changes in Nd0.6Sr0.4MnO3 thin films

Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated using the pulsed laser deposition technique. Scanning electron microscopy (SEM) imaging of the thin films revealed two prominent surface morphologies: a granular and a unique crossed-nano-rod-type morphology. From X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis, we found that the observed nanostructures resulted from altered growth modes occurring on the terraced substrate surface. Furthermore, investigations on the electrical-transport properties of thin films revealed that the films with crossed-nano-rod type morphology showed a sharp resistive transition near the metal-to-insulator transition (MIT). An enhanced temperature coefficient of resistance (TCR) of up to one order of magnitude was also observed compared to the films with granular morphology. Such enhancement in TCR % by tuning the morphology makes these thin films promising candidates for developing oxide-based temperature sensors and detectors.

preprint2014arXiv

Unification of the Pressure and Composition Dependence of Superconductivity in Ru substituted BaFe2As2

Temperature dependent high pressure electrical resistivity studies has been carried out on Ba(Fe_{1-x}Ru_{x})_{2}As_{2} single crystals with x = 0.12, 0.26 and 0.35, which correspond to under doped, optimally doped and over doped composition regimes respectively. The evolution of structural/magnetic (T_{S-M}) and superconducting transition (T_(c)) temperatures, with pressure for various compositions have been obtained. The normal state resistivity has been analyzed in terms of a model that incorporates both spin fluctuations and the opening of the gap in the spin density wave (SDW)phase. It is shown that Tc scales with the strength of the spin fluctuation, B, and T_{S-M} scales with the SDW gap parameter, Δ. This provides a prescription for the unification of the composition and pressure induced superconductivity in BaFe2As2.

preprint2009arXiv

Pressure induced superconductivity in BaFe2As2 single crystal

The evolution of pressure induced superconductivity in single crystal as well as polycrystalline samples of BaFe2As2 has been investigated through temperature dependent electrical resistivity studies in 0-7 GPa pressure range. While the superconducting transition remains incomplete in polycrystalline sample, a clear pressure induced superconductivity with zero resistivity at the expense of magnetic transition, associated with spin density wave (SDW), is observed in the single crystal sample. The superconducting transition temperature (TC) is seen to increase upto a moderate pressure of about ~1.5 GPa and decreases monotonically beyond this pressure. The SDW transition temperature TSDW decreases rapidly with increasing pressure and vanishes above ~1.5 GPa.

preprint2009arXiv

Superconducting Fe(1+delta)Se(1-x)Te(x) thin films: Growth, characterization and properties

Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray diffraction, and the superconducting properties by electrical resistivity measurements. X-ray diffraction analysis establishes the epitaxial growth of the films with c-axis orientation. Atomic force microscopy showed a smooth surface morphology for the films grown on SrTiO3 substrates. All the films are observed to be superconducting with a Tc of ~ 8-14 K depending on the deposition conditions. The deposition parameters were optimized to obtain good quality films with Tc comparable to that of the target material.