Researcher profile

T. R. Devidas

T. R. Devidas contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2021arXiv

Hidden spin-texture at topological domain walls drive exchange bias in a Weyl semimetal

Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or non-volatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets, where the exchange field of the former acts as a means to pin the polarization of the latter. In the present study, we report an unusual instance of this phenomenon in the topological Weyl semimetal Co3Sn2S2, where the magnetic interfaces associated with domain walls suffice to bias the entire ferromagnetic bulk. Remarkably, our data suggests the presence of a hidden order parameter whose behavior can be independently tuned by applied magnetic fields. For micron-size samples, the domain walls are absent, and the exchange bias vanishes, suggesting the boundaries are a source of pinned uncompensated moment arising from the hidden order. The novelty of this mechanism suggests exciting opportunities lie ahead for the application of topological materials in spintronic technologies.

preprint2016arXiv

Effect of Sb substitution on the Topological Surface States in Bi_{2}Se_{3} single crystals: a magneto-transport study

Magneto-transport measurements have been carried out on Bi2-xSbxSe3 (x = 0, 0.05, 0.1, 0.3, 0.5) single crystals at 4.2 K temperature in the magnetic field range of -15 T to 15 T. Shubnikov-de Haas (SdH) oscillations of 2D nature were observed in samples with Sb concentration upto x = 0.3. The analyses of SdH oscillations observed in magneto-resistance data using Lifshitz-Kosevich equation reveal a systematic decrease in the Fermi surface area with Sb substitution. The Berry phase obtained from the Landau Level fan diagram suggests the occurrence of 2D oscillations arising from a Topological Surface State (TSS) for Sb concentrations of x = 0, 0.05 and 0.1; while 2D oscillation seen at higher Sb concentration is attributed to surface 2D electron gas consequent to downward band bending.

preprint2015arXiv

Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder

Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an upturn at low temperatures in the Te doped samples. Magnetoresistance measurements in Bi2Se3 show clear signatures of Shubnikov de Hass oscillations that gets suppressed in the Te doped samples. In the Bi2SeTe2 sample, the magneto-resistance shows a cusp like positive magneto-resistance at low magnetic fields and low temperatures, a feature associated with weak antilocalisation (WAL), that crosses over to negative magneto-resistance at higher fields. The qualitatively different magnetotransport behaviour seen in Bi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder, through an estimate of the carrier density, carrier mobility and an analysis in terms of the Ioffe Regel criterion with support from Hall Effect measurements.

preprint2015arXiv

Studies on proximity effect in Mo/Bi1.95Sb0.05Se3 hybrid structure

Proximity effect in a mechanically exfoliated Bi1.95Sb0.05Se3 topological insulator (TI) single crystal partially covered with disordered superconducting (SC) Mo thin film is reported. Magnetotransport measurement was performed simultaneously across three different regions of the sample viz. SC, TI and SC/TI junction. Resistance measured across SC shows a TC at 4.3 K concomitantly the resistance measurement on TI showed a metallic trend with a steep upturn at TC. Magneto-resistance (MR) measurement on TI exhibit a positive MR with Shubnikov-de Haas (SdH) oscillations, whereas on SC a positive MR superimposed with steep cusp close to TC is observed. Across SC/TI junction both SdH oscillation and the cusp were observed. The frequency of SdH oscillation on SC/TI junction is found to be lesser (~ 125 T) as compared to a reference Bi1.95Sb0.05Se3sample (~ 174 T). Upper critical field HC2 deduced from WHH fit was found to be 17.14 T for a reference Mo film whereas Mo film deposited on TI showed a decreased HC2 of 4.05 T. The coherence length for the former was found to be 4.38 nm and for the latter 9.01 nm. The interaction between the spin-less Cooper pairs in SC with the spin-momentum locked carriers on the surface of TI is believed to cause such changes in transport properties.

preprint2014arXiv

Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study

Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

preprint2014arXiv

Unification of the Pressure and Composition Dependence of Superconductivity in Ru substituted BaFe2As2

Temperature dependent high pressure electrical resistivity studies has been carried out on Ba(Fe_{1-x}Ru_{x})_{2}As_{2} single crystals with x = 0.12, 0.26 and 0.35, which correspond to under doped, optimally doped and over doped composition regimes respectively. The evolution of structural/magnetic (T_{S-M}) and superconducting transition (T_(c)) temperatures, with pressure for various compositions have been obtained. The normal state resistivity has been analyzed in terms of a model that incorporates both spin fluctuations and the opening of the gap in the spin density wave (SDW)phase. It is shown that Tc scales with the strength of the spin fluctuation, B, and T_{S-M} scales with the SDW gap parameter, Δ. This provides a prescription for the unification of the composition and pressure induced superconductivity in BaFe2As2.