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Atsuhiro Nishida

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Published work

3 published item(s)

preprint2016arXiv

Thermoelectric properties of new Bi-chalcogenide layered compounds

The layered Bi-chalcogenide compounds have been drawing much attention as a new layered superconductor family since 2012. Due to the rich variation of crystal structure and constituent elements, the development of new physics and chemistry of the layered Bi-chalcogenide family and its applications as functional materials have been expected. Recently, it was revealed that the layered Bi chalcogenides can show a relatively high thermoelectric performance (ZT = 0.36 in LaOBiSSe at ~650 K). Here, we show the crystal structure variation of the Bi-chalcogenide family and their thermoelectric properties. Finally, the possible strategies for enhancing the thermoelectric performance are discussed on the basis of the experimental and the theoretical facts reviewed here.

preprint2015arXiv

Electronic Origins of Large Thermoelectric Power Factor of LaOBiS2-xSex

We examined the electrical transport properties of densified LaOBiS2-xSex, which constitutes a new family of thermoelectric materials. The power factor increased with increasing concentration of Se, i.e., Se substitution led to an enhanced electrical conductivity, without suppression of the Seebeck coefficient. Hall measurements indicated that the low electrical resistivity resulted from increases in the carrier mobility, and the decrease in carrier concentration led to large absolute values of the Seebeck coefficient of the system.

preprint2015arXiv

High thermoelectric performance and low thermal conductivity of densified LaOBiSSe

In this study, we examined the thermoelectric properties of the layered bismuth-chalcogenide-based (BiCh2-based) compound LaOBiSSe, which is expected to be a new candidate material for thermoelectric applications. Densified samples were obtained with a hot-press method. The results of the X-ray diffraction measurements showed that the samples obtained were weakly oriented. This affected the resistivity (r) and Seebeck coefficient (S) of the samples because they are dependent upon the orientation of the crystal structure. The values obtained for the power factor (S2/r) when measured perpendicular to the pressing direction (P1) were higher than that when measured parallel to the pressing direction (P2). The thermal conductivity (k) of the samples was also sensitive to the orientation. The values of k measured along P2 were lower than that measured along P1. The highest figure-of-merit (approximately 0.36) was obtained at around 650 K in both directions, i.e., P1 and P2.