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Aseema Mohanty

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Published work

4 published item(s)

preprint2019arXiv

Integrated near-field thermo-photovoltaics for on-demand heat recycling

The energy transferred via thermal radiation between two surfaces separated by nanometers distances (near-field) can be much larger than the blackbody limit. However, realizing a reconfigurable platform that utilizes this energy exchange mechanism to generate electricity in industrial and space applications on-demand, remains a challenge. The challenge lies in designing a platform that can separate two surfaces by a small and tunable gap while simultaneously maintaining a large temperature differential. Here, we present a fully integrated, reconfigurable and scalable platform operating in near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system (NEMS) that enables precise positioning of a large area thermal emitter within nanometers distances from a room-temperature germanium photodetector to form a thermo-photovoltaic (TPV) cell. We show over an order of magnitude higher power generation $\mathrm{P_{gen} \sim 1.25 \, μW \cdot cm^{-2}}$ from our TPV cell by tuning the gap between a hot emitter ($\mathrm{T_E \sim 880 \, K}$) and the cold photodetector ($\mathrm{T_D \sim 300 \, K}$) from $\mathrm{\sim 500 \, nm}$ to $\mathrm{\sim 100 \, nm}$. The significant enhancement in $\mathrm{P_{gen}}$ at such small distances is a clear indication of near-field heat transfer effect. Our electrostatically controlled NEMS switch consumes negligible tuning power ($\mathrm{P_{gen}/P_{NEMS} \sim 10^4}$) and relies on conventional silicon-based process technologies.

preprint2018arXiv

A Reconfigurable Nanophotonics Platform for Sub-Millisecond, Deep Brain Neural Stimulation

Nanophotonics provides the ability to rapidly and precisely reconfigure light beams on a compact platform. Infrared nanophotonic devices are widely used in data communications to overcome traditional bandwidth limitations of electrical interconnects. Nanophotonic devices also hold promise for use in biological applications that require visible light, but this has remained technically elusive due to the challenges of reconfiguring and guiding light at these smaller dimensions. In neuroscience, for example, there is a need for implantable optical devices to optogenetically stimulate neurons across deep brain regions with the speed and precision matching state-of-the-art recording probes. Here we demonstrate the first platform for reconfigurable nanophotonic devices in the visible wavelength range and show its application in vivo in the brain. We demonstrate an implantable probe endowed with the ability to rapidly switch and route multiple optical beams using a nanoscale switching network. Each switch consists of a silicon nitride waveguide structure that can be reconfigured by electrically tuning the phase of light and is designed for robustness to fabrication variation, enabling scalable devices. By implanting our probe in mouse visual cortex, we demonstrate in vivo the ability to stimulate identified sets of neurons across layers to produce multi-neuron spike patterns and record them simultaneously with sub-millisecond temporal precision. This nanophotonic platform can be scaled up and integrated with high-density neural recording technologies, opening the door to implantable probe technologies that are able to simultaneously record and stimulate the activity of large neural populations at distant regions of the brain with sub-millisecond precision. We expect this platform will enable researchers to gain a deeper understanding into the spatio-temporal precision of the neural code.

preprint2016arXiv

Raman-assisted coherent, mid-infrared frequency combs in silicon microresonators

We demonstrate the first low-noise mid-IR frequency comb source using a silicon microresonator. Our observation of strong Raman scattering lines in the generated comb suggests that Raman and four-wave mixing interactions play a role in assisting the transition to the low-noise state. In addition, we characterize, the intracavity comb generation dynamics using an integrated PIN diode, which takes advantage of the inherent three-photon absorption process in silicon.

preprint2014arXiv

Silicon-Chip Mid-Infrared Frequency Comb Generation

Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to integrate on-chip. An alternative approach using parametric mixing in microresonators is highly promising since the platform is extremely compact and can operate with relatively low powers. However, material and dispersion engineering limitations have prevented the realization of a microresonator comb source past 2.55 um. Although silicon could in principle provide a CMOS compatible platform for on-chip comb generation deep into the mid-IR, to date, silicon's linear and nonlinear losses have prevented the realization of a microresonator-based comb source. Here we overcome these limitations and realize a broadband frequency comb spanning from 2.1 um to 3.5 um and demonstrate its viability as a spectroscopic sensing platform. Such a platform is compact and robust and offers the potential to be versatile and durable for use outside the laboratory environment for applications such as real-time monitoring of atmospheric gas conditions.