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Arturas Vailionis

Arturas Vailionis contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Imaging and Control of Ferromagnetism in a Polar Antiferromagnet

Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase transition when atomically growing polar antiferromagnetic LaMnO3 (001) films on SrTiO3 substrates. For a thickness of five unit cells or less, the films are antiferromagnetic, but for six unit cells or more, the LaMnO3 film undergoes a phase transition to a ferromagnetic state over its entire area, which is visualized by scanning superconducting quantum interference device microscopy. The transition is explained in terms of electronic reconstruction originating from the polar nature of the LaMnO3 (001) films. Our results demonstrate how new emergent functionalities can be visualized and engineered in atomically thick oxide films at the atomic level.

preprint2012arXiv

High temperature magnetic insulating phase in ultrathin La0.67Sr0.33MnO3 films

We present a study of the thickness dependence of magnetism and electrical conductivity in ultra thin La0.67Sr0.33MnO3 films grown on SrTiO3 (110) substrates. We found a critical thickness of 10 unit cells below which the conductivity of the films disappeared and simultaneously the Curie temperature (TC) increased, indicating a magnetic insulating phase at room temperature. These samples have a TC of about 560 K with a significant saturation magnetization of 1.2 +- 0.2 muB/Mn. The canted antiferromagnetic insulating phase in ultra thin films of n< 10 coincides with the occurrence of a higher symmetry structural phase with a different oxygen octahedra rotation pattern. Such a strain engineered phase is an interesting candidate for an insulating tunneling barrier in room temperature spin polarized tunneling devices.

preprint2010arXiv

Uniaxial contribution to the magnetic anisotropy of La0.67Sr0.33MnO3 thin films induced by orthorhombic crystal structure

La0.67Sr0.33MnO3 (LSMO) thin films under compressive strain have an orthorhombic symmetry with (1-10)o and (001)o in-plane orientations. (The subscript o denotes the orthorhombic symmetry.) Here, we grew LSMO on cubic (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) substrates and observed a uniaxial contribution to the magnetic anisotropy which is related to the orthorhombic crystal structure. Since the lattice mismatch is equal in the two directions, the general understanding of anisotropy in LSMO, which relates the uniaxial anisotropy to differences in strain, cannot explain the results. These findings suggest that the oxygen octahedra rotations associated with the orthorhombic structure, possibly resulting in different Mn-O-Mn bond angles and therefore a change in magnetic coupling between the [1-10]o and [001]o directions, determine the anisotropy. We expect these findings to lead to a better understanding of the microscopic origin of the magnetocrystalline anisotropy in LSMO.

preprint2009arXiv

Enhanced superfluid density on twin boundaries in Ba(Fe1-xCox)2As2

Superconducting quantum interference device (SQUID) microscopy shows stripes of increased diamagnetic susceptibility in underdoped, but not overdoped, single crystals of Ba(Fe1-xCox)2As2. These stripes of increased diamagnetic susceptibility are consistent with enhanced superfluid density on twin boundaries. Individual vortices avoid pinning on or crossing the stripes, and prefer to travel parallel to them. These results indicate a relationship between superfluid density, local strain, and frustrated magnetism, and demonstrate two mechanisms for enhancing critical currents.