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Arnhild Jacobsen

Arnhild Jacobsen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2014arXiv

Finite bias spectroscopy of a three-terminal graphene quantum dot in the multi-level regime

Finite bias spectroscopy measurements of a three-terminal graphene quantum dot are presented. Numerous lines of enhanced differential conductance are observed outside the Coulomb diamonds. In the single-level transport regime such lines are often associated with transport through excited states. Here the system is in the multi-level transport regime. We argue that the lines are most likely a result of strong coupling to only a few of the excited states available in the bias window. We also discuss the option that fluctuations of the density of states in the leads are fully or partly responsible for the appearance of the lines. Such a detailed analysis requires the presence of three leads to the dot.

preprint2010arXiv

Selective Chemical Modification of Graphene surfaces: Distinction between Single and Bilayer Graphene

Graphene modifications with oxygen or hydrogen are well known in contrast to carbon attachment to the graphene lattice. The chemical modification of graphene sheets with aromatic diazonium ions (carbon attachment) is analyzed by confocal Raman spectroscopy. The temporal and spatial evolution of surface adsorbed species allowed accurate tracking of the chemical reaction and identification of intermediates. The controlled transformation of sp2 to sp3 carbon proceeds in two separate steps. The presented derivatization is selective for single layer graphene and allows controlled transformation of adsorbed diazonium reagents into covalently bound surface derivatives with enhanced reactivity at the edge of single layer graphene. On bi-layer graphene the derivatization proceeds to an adsorbed intermediate without further reaction to form a covalent attachment on the carbon surface.

preprint2009arXiv

Aharonov-Bohm effect in a side-gated graphene ring

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence length of the order of 1 micrometer at a temperature of 500mK.