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Arka Bikash Dey

Arka Bikash Dey contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Giant spectral renormalization and complex hybridization physics in a Kondo lattice system, CeCuSb2

We investigate the electronic structure of a Kondo lattice system, CeCuSb2 exhibiting significant mass enhancement and Kondo-type behavior. We observe multiple features in the hard x-ray photoemission spectra of Ce core levels due to strong final-state effects. The depth-resolved data exhibit a significant change in relative intensity of the features with the surface sensitivity of the probe. The extracted surface and bulk spectral functions are different and exhibit a Kondo-like feature at higher binding energies in addition to the well and poorly screened features. The core-level spectra of Sb exhibit huge and complex changes as a function of the surface sensitivity of the technique. The analysis of the experimental data suggests that the two non-equivalent Sb sites possess different electronic structures and in each category, the Sb layers close to the surface are different from the bulk ones. An increase in temperature influences the Ce-Sb hybridization significantly. The plasmon-excitation-induced loss features are also observed in all core level spectra. All these results reveal the importance of Ce-Sb hybridizations and indicate that the complex renormalization of Ce-Sb hybridization may be the reason for the exotic electronic properties of this system.

preprint2021arXiv

Time-resolved diffraction and photoelectron spectroscopy investigation of the reactive molecular beam epitaxy of $\mathrm{Fe_3O_4}$ ultrathin films

We present time-resolved high energy x-ray diffraction (tr-HEXRD), time-resolved hard x-ray photoelectron spectroscopy (tr-HAXPES) and time-resolved grazing incidence small angle x-ray scattering (tr-GISAXS) data of the reactive molecular beam epitaxy (RMBE) of $\mathrm{Fe_3O_4}$ ultrathin films on various substrates. Reciprocal space maps are recorded during the deposition of $\mathrm{Fe_3O_4}$ on $\mathrm{SrTiO_3(001)}$, MgO(001) and NiO/MgO(001) in order to observe the temporal evolution of Bragg reflections sensitive to the octahedral and tetrahedral sublattices of the inverse spinel structure of $\mathrm{Fe_3O_4}$. A time delay between the appearance of rock salt and spinel-exclusive reflections reveals that first, the iron oxide film grows with $\mathrm{Fe_{1-δ}O}$ rock salt structure with exclusive occupation of octahedral lattice sites. When this film is 1.1$\,$nm thick, the further growth of the iron oxide film proceeds in the inverse spinel structure, with both octahedral and tetrahedral lattice sites being occupied. In addition, iron oxide on $\mathrm{SrTiO_3(001)}$ initially grows with none of these structures. Here, the formation of the rock salt structure starts when the film is 1.5$\,$nm thick. This is confirmed by tr-HAXPES data obtained during growth of iron oxide on $\mathrm{SrTiO_3(001)}$, which demonstrate an excess of $\mathrm{Fe^{2+}}$ cations in growing films thinner than 3.2$\,$nm. This rock salt phase only appears during growth and vanishes after the supply of the Fe molecular beam is stopped. Thus, it can be concluded the rock salt structure of the interlayer is a property of the dynamic growth process. The tr-GISAXS data link these structural results to an island growth mode of the first 2-3$\,$nm on both MgO(001) and $\mathrm{SrTiO_3(001)}$ substrates.

preprint2020arXiv

Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experiments

Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, we compare nXRD experiments carried out on individual semiconductor nanowires in their as grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the 3rd generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 10$^{10}$s$^{-1}$, the axial lattice parameter and tilt of individual GaAs/In$_{0.2}$Ga$_{0.8}$As/GaAs core-shell nanowires were monitored by continuously recording reciprocal space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology are studied by cathodoluminescence spectroscopy, energy dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray induced ozone reactions in air. Due to the lower heat transfer coefficient compared to GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.