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Archana Tankasala

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quant-ph cond-mat.mes-hall cond-mat.mtrl-sci physics.atom-ph physics.comp-ph

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preprint2020arXiv

Quantum-Kit: Simulating Shor's Factorization of 24-Bit Number on Desktop

Quantum-Kit is a graphical desktop application for quantum circuit simulations. Its powerful, memory-efficient computational engine enables large-scale simulations on a desktop. The ability to design hybrid circuits, with both quantum and classical bits and controls, is employed to demonstrate Kitaev's approach to Shor's factorization algorithm. For the first time, Shor's factorization of a 24-bit integer is simulated with Quantum-Kit in a mere 26 minutes on a modest desktop with Intel Core i5 7400T, 2.4GHz and12GB RAM. While the largest number factorized so far has been a 20-bit integer, requiring 60 qubits and a supercomputer, the hybrid circuit functionality allows the same number to be factorized using Kitaev's trick with only 21 qubits, in 2.3 minutes, on a desktop. Furthermore, conventional Shor's algorithm for a 13-bitinteger with 39 qubits is shown to be 35x faster with Quantum-Kit.

preprint2016arXiv

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.

preprint2015arXiv

Engineering inter-qubit exchange coupling between donor bound electrons in silicon

We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We find the asymmetric 2P-1P system provides a highly tunable exchange-curve with mitigated J-oscillation, in which 5 orders of magnitude change in the exchange energy can be achieved using a modest range of electric field for 15 nm qubit separation. Compared to the barrier gate control of exchange in the Kane qubit, the detuning gate design reduces the demanding constraints of precise donor separation, gate width, density and location, as a range of J spanning over a few orders of magnitude can be engineered for various donor separations. We have combined a large-scale full band atomistic tight-binding method with a full configuration interaction technique to capture the full two-electron spectrum of gated donors, providing state-of-the-art calculations of exchange energy in 1P-1P and 2P-1P qubits.