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Benoit Voisin

Benoit Voisin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-phphysics.atom-phcond-mat.mtrl-scicond-mat.str-elphysics.comp-ph

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Published work

7 published item(s)

preprint2020arXiv

Certification of spin-based quantum simulators

Quantum simulators are engineered devices controllably designed to emulate complex and classically intractable quantum systems. A key challenge is to certify whether the simulator truly mimics the Hamiltonian of interest. This certification step requires the comparison of a simulator's output to a known answer, which is usually limited to small systems due to the exponential scaling of the Hilbert space. Here, in the context of Fermi-Hubbard spin-based analogue simulators, we propose a modular many-body spin to charge conversion scheme that scales linearly with both the system size and the number of low-energy eigenstates to discriminate. Our protocol is based on the global charge state measurement of a 1D spin chain performed at different detuning potentials along the chain. In the context of semiconductor-based systems, we identify realistic conditions for detuning the chain adiabatically in order to avoid state mixing while preserving charge coherence. Large simulators with vanishing energy gaps, including 2D arrays, can be certified block-by-block with a number of measurements scaling only linearly with the system size.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Scanned single-electron probe inside a silicon electronic device

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservoir using sub-nm position control of the tip, and the quantum dot energy level using a voltage applied to the device's gate reservoir. Despite the $\sim 1$nm proximity of the quantum dot to the metallic tip, we find the gate provides sufficient capacitance to enable a high degree of electric control. Combined with atomic scale imaging, we use the quantum dot to probe applied electric fields and charge in individual defects in the device. This capability is expected to aid in the understanding of atomic-scale devices and the quantum states realized in them.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision

The aggressive scaling of silicon-based nanoelectronics has reached the regime where device function is affected not only by the presence of individual dopants, but more critically their position in the structure. The quantitative determination of the positions of subsurface dopant atoms is an important issue in a range of applications from channel doping in ultra-scaled transistors to quantum information processing, and hence poses a significant challenge. Here, we establish a metrology combining low-temperature scanning tunnelling microscopy (STM) imaging and a comprehensive quantum treatment of the dopant-STM system to pin-point the exact lattice-site location of sub-surface dopants in silicon. The technique is underpinned by the observation that STM images of sub surface dopants typically contain many atomic-sized features in ordered patterns, which are highly sensitive to the details of the STM tip orbital and the absolute lattice-site position of the dopant atom itself. We demonstrate the technique on two types of dopant samples in silicon -- the first where phosphorus dopants are placed with high precision, and a second containing randomly placed arsenic dopants. Based on the quantitative agreement between STM measurements and multi-million-atom calculations, the precise lattice site of these dopants is determined, demonstrating that the metrology works to depths of about 36 lattice planes. The ability to uniquely determine the exact positions of sub-surface dopants down to depths of 5 nm will provide critical knowledge in the design and optimisation of nanoscale devices for both classical and quantum computing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Control of the ionization state of 3 single donor atoms in silicon

By varying the gate and substrate voltage in a short silicon-on-insulator trigate field effect transistor we control the ionization state of three arsenic donors. We obtain a good quantitative agreement between 3D electrostatic simulation and experiment for the control voltage at which the ionization takes place. It allows us observing the three doubly occupied states As- at strong electric field in the presence of nearby source-drain electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory

Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter ($η_2$) from -1.3 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the static dielectric screening to -1.72 $\times$ 10$^{-3} μ$m$^2$/V$^2$ for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of $η_2$ to -1.87 $\times$ 10$^{-3} μ$m$^2$/V$^2$, resulting in an excellent agreement of theory with the experimentally measured value of -1.9 $\pm$ 0.2 $\times$ 10$^{-3} μ$m$^2$/V$^2$. Based on our direct comparison of the calculations with the experiment, we conclude that the previously ignored non-static dielectric screening of the donor potential and the lattice strain significantly influence the donor wave function charge density and thereby leads to a better agreement with the available experimental data sets.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A tunable, dual mode field-effect or single electron transistor

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO$_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.

0 citations0 reviewsNo code linkedOpen access