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Anthony K. Boyd

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Published work

2 published item(s)

preprint2015arXiv

Hybrid Metal-Graphene Plasmons for Tunable Terahertz Technology

Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves are confined to finite-sized graphene, plasmon resonances emerge that are characterized by alternating charge accumulation at the opposing edges of the graphene. The resonant frequency of such a structure depends on both the size and the surface charge density, and can be electrically tuned throughout the terahertz range by applying a gate voltage[3,4]. The promise of tunable graphene THz plasmonics has yet to be fulfilled, however, because most proposed optoelectronic devices including detectors, filters, and modulators[5-10] desire near total modulation of the absorption or transmission, and require electrical contacts to the graphene -- constraints that are difficult to meet using existing plasmonic structures. We report here a new class of plasmon resonance that occurs in a hybrid graphene-metal structure. The sub-wavelength metal contacts form a capacitive grid for accumulating charge, while the narrow interleaved graphene channels, to first order, serves as a tunable inductive medium, thereby forming a structure that is resonantly-matched to an incident terahertz wave. We experimentally demonstrate resonant absorption near the theoretical maximum in readily-available, large-area graphene, ideal for THz detectors and tunable absorbers. We further predict that the use of high mobility graphene will allow resonant THz transmission near 100%, realizing a tunable THz filter or modulator. The structure is strongly coupled to incident THz radiation, and solves a fundamental problem of how to incorporate a tunable plasmonic channel into a device with electrical contacts.

preprint2013arXiv

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show work-function engineering to be an effective approach for controlling the polarity of MoS2 devices. Gated multi-layer MoS2 transistors with Au source/drain contacts exhibit n-type operation, while those with Pd contacts are shown to have p-type behavior. Devices with one Au and one Pd contact exhibit asymmetric ambipolar behavior and diode characteristics over a wide range of gate voltage, as well as a sizable photovoltaic effect. We argue that the photovoltaic effect arises from the built-in potential of the space charge accumulated at the source and drain contacts.