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Amy Y. Liu

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Published work

6 published item(s)

preprint2019arXiv

Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.

preprint2016arXiv

Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS$_2$: Detection of the commensurate charge density wave phase through Raman scattering

We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS$_2$ for various thicknesses in the high-temperature (undistorted) phase and the low-temperature commensurate charge density wave (CDW) phase. We also present measurements of the Raman spectra for bulk, few-layer, and monolayer samples at temperatures well below that of the bulk transition to the commensurate phase. Through our calculations, we identify the low-frequency folded-back acoustic modes as a convenient signature of the commensurate CDW wave structure in vibrational spectra. In our measured Raman spectra, this signature is clearly evident in all of the samples, indicating that the commensurate phase remains the ground state as the material is thinned, even down to a single layer. This is in contrast to some previous studies which suggest a suppression of the commensurate CDW transition in thin flakes. We also use polarized Raman spectroscopy to probe c-axis orbital texture in the low-T phase, which has recently been suggested as playing a role in the metal-insulator transition that accompanies the structural transition to the commensurate CDW phase.

preprint2015arXiv

Site-dependent magnetism of Ni adatoms on MgO/Ag(001)

We examine the adsorption of a single Ni atom on a monolayer of MgO on a Ag substrate using DFT and DFT+U computational approaches. We find that the electronic and magnetic properties vary considerably across the three binding sites of the surface. Two of the binding sites are competitive in energy, and the preferred site depends on the strength of the on-site Coulomb interaction U. These results can be understood in terms of the competition between bonding and magnetism for surface adsorbed transition metal atoms. Comparisons are made with a recent experimental and theoretical study of Co on MgO/Ag, and implications for scanning tunneling microscopy experiments on the Ni system are discussed.

preprint2013arXiv

Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions

Atomically thin MoS2 has recently emerged as a very attractive material for nanoscale optoelectronic devices. While n-type transport in MoS2 devices has been demonstrated, hole conduction has been more challenging. Here we show work-function engineering to be an effective approach for controlling the polarity of MoS2 devices. Gated multi-layer MoS2 transistors with Au source/drain contacts exhibit n-type operation, while those with Pd contacts are shown to have p-type behavior. Devices with one Au and one Pd contact exhibit asymmetric ambipolar behavior and diode characteristics over a wide range of gate voltage, as well as a sizable photovoltaic effect. We argue that the photovoltaic effect arises from the built-in potential of the space charge accumulated at the source and drain contacts.

preprint2007arXiv

Combining the advantages of superconducting MgB2 and CaC6 in one material: suggestions from first-principles calculations

We show that a recently predicted layered phase of lithium monoboride, Li2B2, combines the key mechanism for strong electron-phonon coupling in MgB2 (i.e., interaction of covalent B sigma bands with B bond-stretching modes) with the dominant coupling mechanism in CaC6 (i.e., interaction of free-electron-like interlayer states with soft intercalant modes). Yet, surprisingly, the electron-phonon coupling in Li2B2 is calculated to be weaker than in either MgB2 or CaC6. We demonstrate that this is due to the accidental absence of B pi states at the Fermi level in Li2B2. In MgB2, the pi electrons play an indirect but important role in strengthening the coupling of sigma electrons. Doping Li2B2 to restore pi electrons at the Fermi level is expected to lead to a new superconductor that could surpass MgB2 in Tc.

preprint1998arXiv

Reevaluating electron-phonon coupling strengths: Indium as a test case for ab initio and many-body-theory methods

Using indium as a test case, we investigate the accuracy of the electron-phonon coupling calculated with state-of-the-art ab initio and many-body theory methods. The ab initio calculations -- where electrons are treated in the local-density approximation, and phonons and the electron-phonon interaction are treated within linear response -- predict an electron-phonon spectral function alpha^2 F(omega) which translates into a relative tunneling conductance that agrees with experiment to within one part in 1000. The many-body theory calculations -- where alpha^2 F(omega) is extracted from tunneling data by means of the McMillan-Rowell tunneling inversion method -- provide spectral functions that depend strongly on details of the inversion process. For the the most important moment of alpha^2 F(omega), the mass-renormalization parameter lambda, we report 0.9 +/- 0.1, in contrast to the value 0.805 quoted for nearly three decades in the literature. The ab initio calculations also provide the transport electron-phonon spectral function alpha_{tr}^2 F(omega), from which we calculate the resistivity as a function of temperature in good agreement with experiment.