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Anna Elsukova

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cond-mat.mtrl-sci

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preprint2022arXiv

Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials

Solid-state precipitation can be used to tailor materials properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, we uncover unconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local co-melting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism.

preprint2021arXiv

Electron-Phonon Coupling and Quantum Correction to Topological Magnetoconductivity in Bi2GeTe4

We report on structure, vibrational properties and weak-antilocalization-(WAL-) induced quantum correction to magnetoconductivity in single crystal Bi2GeTe4. Surface band structure calculations show a single Dirac cone corresponding to topological surface states in Bi2GeTe4. An estimated phase coherence length, l_ϕ ~ 143 nm and prefactor α ~ - 1.54 from Hikami-Larkin-Nagaoka fitting of magnetoconductivity describe the quantum correction to conductivity. An anomalous temperature dependence of A1g Raman modes confirms enhanced electron-phonon interactions. Our results establish the involvement of vibrations of Bi-Te with existence of topological surface states and WAL in Bi2GeTe4.

preprint2013arXiv

Laser-Doping of Crystalline Silicon Substrates using Doped Silicon Nanoparticles

Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During laser processing the particles as well as a surface-near substrate layer are melted to subsequently crystallize in the same orientation as the substrate. The doping profile is investigated by secondary ion mass spectroscopy revealing a constant B concentration of 2x10^18 cm^-3 throughout the entire analyzed depth of 5μm. Four-point probe measurements demonstrate that the effective conductivity of the doped sample is increased by almost two orders of magnitude. The absolute doping depth is estimated to be in between 8μm and 100μm. Further, a pn-diode is created by laser doping an n-type c-Si substrate using the Si NPs.