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Anita Guarino

Anita Guarino contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Superconductivity induced by structural reorganization in the electron-doped cuprate Nd$_{2-x}$Ce$_x$CuO$_4$

Electron-doped and hole-doped superconducting cuprates exhibit a symmetric phase diagram as a function of doping. This symmetry is however only approximate. Indeed, electron-doped cuprates become superconductors only after a specific annealing process: This annealing affects the oxygen content by only a tiny amount, but has a dramatic impact on the electronic properties of the sample. Here we report the occurrence of superconductivity in oxygen-deficient Nd$_{2-x}$Ce$_x$CuO$_4$ thin films grown in an oxygen-free environment, after annealing in pure argon flow. As verified by x-ray diffraction, annealing induces an increase of the interlayer distance between CuO$_2$ planes in the crystal structure. Since this distance is correlated to the concentration of oxygens in apical positions, and since oxygen content cannot substantially increase during annealing, our experiments indicate that the superconducting phase transition has to be ascribed to a migration of oxygen ions to apical positions during annealing. Moreover, as we confirm via first-principles density functional theory calculations, the changes in the structural and transport properties of the films can be theoretically described by a specific redistribution of the existing oxygen ions at apical positions with respect to CuO$_2$ planes, which remodulates the electronic band structure and suppresses the antiferromagnetic order, allowing the emergence of hole superconductivity.

preprint2020arXiv

Self-formed $LaAlO_3/SrTiO_3$ Micro-Membranes

Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for over a decade two of the major current research fields in Materials Science: correlated transition-metal-oxide systems and low-dimensional systems. A full merging of these two fields requires nevertheless the realization of $LaAlO_3/SrTiO_3$ heterostructures in the form of freestanding membranes. Here we show a completely new method for obtaining oxide hetero-membranes with micrometer lateral dimensions. Unlike traditional thin-film-based techniques developed for semiconductors and recently extended to oxides, the concept we demonstrate does not rely on any sacrificial layer and is based instead on pure strain engineering. We monitor through both real-time and post-deposition analyses, performed at different stages of growth, the strain relaxation mechanism leading to the spontaneous formation of curved hetero-membranes. Detailed transmission electron microscopy investigations show that the membranes are fully epitaxial and that their curvature results in a huge strain gradient, each of the layers showing a mixed compressive/tensile strain state. Electronic devices are fabricated by realizing ad hoc circuits for individual micro-membranes transferred on silicon chips. Our samples exhibit metallic conductivity and electrostatic field effect similar to 2D-electron systems in bulk heterostructures. Our results open a new path for adding oxide functionality into semiconductor electronics, potentially allowing for ultra-low voltage gating of a superconducting transistors, micromechanical control of the 2D electron gas mediated by ferroelectricity and flexoelectricity, and on-chip straintronics.