BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Andrey Rogachev

Andrey Rogachev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.supr-conphysics.app-phcond-mat.dis-nncond-mat.mes-hall

Catalog footprint

What is connected

4works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2020arXiv

An analysis of carrier dynamics in methylammonium lead triiodide perovskite solar cells using cross-correlation noise spectroscopy

Using cross-correlation current noise spectroscopy, we have investigated carrier dynamics in methylammonium lead triiodide solar cells. This method provides a space selectivity for devices with planar multi-layered structure, effectively amplifying current noise contributions coming from the most resistive element of the stack. In the studied solar cells, we observe near full-scale shot noise, indicating the dominance of noise generation by a single source, likely the interface between the perovskite and the spiro-OMeTAD hole-transport layer. We argue that the strong 1/f noise term has contributions both from the perovskite layer and interfaces. It displays non-ideal dependence on photocurrent, $S \propto I^{1.4}$ (instead of usual $S \propto I^2$ ), which is likely due to current-induced halide migration. Finally, we observe generation-recombination noise. The relaxation time of this process grows linearly with photocurrent, which allows to attribute this contribution to bimolecular recombination in the perovskite bulk absorption layer. Extrapolating our results, we estimate that at the standard 1 sun illumination the electron-hole recombination time is 5 microseconds.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Deficiency of the scaling collapse as an indicator of a superconductor-insulator quantum phase transition

Finite-size scaling analysis is a well-accepted method for identification and characterization of quantum phase transitions (QPTs) in superconducting, magnetic and insulating systems. We formally apply this analysis in the form suitable for QPTs in 2-dimensional superconducting films to magnetic-field driven superconductor-metal transition in 1-dimensional MoGe nanowires. Despite being obviously inapplicable to nanowires, the 2d scaling equation leads to a high-quality scaling collapse of the nanowire resistance in the temperature and resistance ranges comparable or better to what is accepted in the analysis of the films. Our results suggest that the appearance and the quality of the scaling collapse by itself is not a reliable indicator of a QPT. We have also observed a sign-change of the zero-bias anomaly (ZBA) in the non-linear resistance, occurring exactly at the critical field of the accidental QPT. This behavior is often taken as an additional confirmation of the transition. We argue that in nanowires, the non-linearity is caused by electron heating and has no relation to the critical fluctuations. Our observation suggests that similar to the scaling collapse, the sign-change of ZBA can be a misleading indicator of QPT.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Silicon heterojunction solar cells explored via noise spectroscopy: spatial selectivity and the influence of a-Si passivating layers

We have employed state-of-the-art cross-correlation noise spectroscopy to study carrier dynamics in silicon heterojunction solar cells, complimented by SENTARUS simulations of the same devices. These cells were composed of a light absorbing n-doped crystalline silicon layer contacted by passivating layers of i-a-Si:H and doped a-Si:H electrode layers. The method provided a two-orders-of-magnitude improved sensitivity and allowed to resolution of three additional contributions to noise in addition to 1/f noise. We have observed shot noise with Fano factor close to unity. We have also observed a peculiar generation-recombination term, which presents only under light illumination with energy above 2 eV and thus reflects light absorption and carrier trapping in the a-Si:H layers. A second, low-frequency generation-recombination term was detected at temperatures below 100 K. We argue that it appears because the process of charge carrier transfer across i-a-Si:H occurs via an intermediate defect limited by tunneling above about 100 K and a thermally assisted process below this temperature. We also discuss the spatial selectivity of noise spectroscopy, namely the tendency of the method to amplify noise contributions from the most resistive element of the cell. Indeed, in our case, all three terms are linked to the passivating i-a-Si:H layer.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Probing individual topological tunnelling events of a quantum field via their macroscopic consequences

Phase slips are topological fluctuation events that carry the superconducting order-parameter field between distinct current carrying states. Owing to these phase slips low-dimensional superconductors acquire electrical resistance. In quasi-one-dimensional nanowires it is well known that at higher temperatures phase slips occur via the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed via quantum tunnelling events, which are known as quantum phase slips (QPS). Here we report strong evidence for individual quantum tunnelling events undergone by the superconducting order-parameter field in homogeneous nanowires.We accomplish this via measurements of the distribution of switching currents-the high-bias currents at which superconductivity gives way to resistive behaviour-whose width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. We outline a stochastic model of phase slip kinetics which relates the basic phase slip rates to switching rates. Comparison with this model indicates that the phase predominantly slips via thermal activation at high temperatures but at sufficiently low temperatures switching is caused by individual topological tunnelling events of the order-parameter field, i.e., QPS. Importantly, measurements on several wires show that quantum fluctuations tend to dominate over thermal fluctuations at larger temperatures in wires having larger critical currents. This fact provides strong supports the view that the anomalously high switching rates observed at low temperatures are indeed due to QPS, and not consequences of extraneous noise or hidden inhomogeneity of the wire.

0 citations0 reviewsNo code linkedOpen access