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Andrey Bakin

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2 published item(s)

preprint2022arXiv

Assessment of sub-sampling schemes for compressive nano-FTIR imaging

Nano-FTIR imaging is a powerful scanning-based technique at nanometer spatial resolution which combines Fourier transform infrared spectroscopy (FTIR) and scattering-type scanning near-field optical microscopy (s-SNOM). However, recording large spatial areas with nano-FTIR is limited by long measurement times due to its sequential data acquisition. Several mathematical approaches have been proposed to tackle this problem. All of them have in common that only a small fraction of randomly chosen measurements is required. However, choosing the fraction of measurements in a random fashion poses practical challenges for scanning procedures and does not lead to time savings as large as desired. We consider different, practically relevant sub-sampling schemes assuring a faster acquisition. It is demonstrated that results for almost all considered sub-sampling schemes, namely original Lissajous, triangle Lissajous, and random reflection sub-sampling, at a sub-sampling rate of 10%, are comparable to results when using a random sub-sampling of 10%. This implies that random sub-sampling is not required for efficient data acquisition.

preprint2019arXiv

Plasma Profiling Time-of-Flight Mass Spectrometry for Fast Elemental Analysis of Semiconductor Structures with Depth Resolution in the Nanometer Range

Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest, as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al., PP-TOFMS can be used to obtain the composition in the structures for modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nano-analysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel. %. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without expensive and time consuming sample preparation as it is needed for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than for example electrochemical capacitance-voltage (ECV), as the acquisition of all elements occurs in parallel and not only electrically (ECV) or optically (CL) active elements are observed.