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Andrew Lin

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Published work

3 published item(s)

preprint2016arXiv

Investigating the Transition Region in Scanned Probe Images of the Cyclotron Orbit in Graphene

A cooled scanning probe microscope (SPM) has been used to image cyclotron orbits of electrons through high-mobility graphene in a magnetic field.1-5 In a hBN-graphene-hBN device patterned into a hall bar geometry, the magnetic field focuses a current Ii injected from one narrow contact into another narrow contact located an integer number of cyclotron diameters away, creating a voltage Vc. The degree of focusing is measured by the transresistance Rm = Vc/Ii. In SPM, the tip can either enhance or decrease conductance in the sample by deflecting electrons into or away from the second contact, respectively.3,4 Our SPM images of magnetic focusing feature a region in which the tip transitions from enhancing to decreasing the conductance in the sample where the change in transresistance caused by the tip is equal to zero. In this paper, we investigate how the location of this region in the graphene sample changes as we modulate the electron density n and magnetic field B. By plotting line-cuts of the change in trans-resistance for different electron densities and magnetic fields, we identify trends in the inflection point where the tip changes from enhancing to decreasing the conductance in the sample. From the location of each transition region, we show that the cyclotron diameter of the electron trajectories can be obtained, and explain the trends in inflection point location for different electron densities and magnetic fields.

preprint2013arXiv

The Dependence of Alloy Composition of InGaAs Inserts in GaAs Nanopillars on Selective-Area Pattern Geometry

GaAs nanopillars with 150 nm - 200 nm long axial InGaAs inserts are grown by MOCVD via catalyst-free selective-area-epitaxy (SAE). The alloy composition of the InGaAs region, as determined by room-temperature photoluminescence (PL), depends critically on the pitch and diameter of the selective-area pattern geometry. The PL emission varies based on pattern geometry from 1.0 \{mu}m to 1.25 \{mu}m corresponding to a In to Ga ratio from 0.15 to > 0.3. This In enrichment is explained by a pattern dependent change in the incorporation rate for In and Ga. Capture coefficients for Ga and In adatoms are calculated for each pattern pitch. As the pitch decreases, these data reveal a contest between a synergetic effect (related to nanopillar density) that increases the growth rate and a competition for available material that limits the growth rate. Gallium is more susceptible to both of these effects, causing the observed changes in alloy composition.

preprint2012arXiv

The Complexity of Manipulating $k$-Approval Elections

An important problem in computational social choice theory is the complexity of undesirable behavior among agents, such as control, manipulation, and bribery in election systems. These kinds of voting strategies are often tempting at the individual level but disastrous for the agents as a whole. Creating election systems where the determination of such strategies is difficult is thus an important goal. An interesting set of elections is that of scoring protocols. Previous work in this area has demonstrated the complexity of misuse in cases involving a fixed number of candidates, and of specific election systems on unbounded number of candidates such as Borda. In contrast, we take the first step in generalizing the results of computational complexity of election misuse to cases of infinitely many scoring protocols on an unbounded number of candidates. Interesting families of systems include $k$-approval and $k$-veto elections, in which voters distinguish $k$ candidates from the candidate set. Our main result is to partition the problems of these families based on their complexity. We do so by showing they are polynomial-time computable, NP-hard, or polynomial-time equivalent to another problem of interest. We also demonstrate a surprising connection between manipulation in election systems and some graph theory problems.