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Researcher profile

Andreas Scholz

Andreas Scholz contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.dis-nn

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Published work

6 published item(s)

preprint2014arXiv

Signatures of spin-preserving symmetries in two-dimensional hole gases

We investigate ramifications of the persistent spin helix symmetry in two-dimensional hole gases in the conductance of disordered mesoscopic systems. To this end we extend previous models by going beyond the axial approximation for III-V semiconductors. For heavy-hole subbands we identify an exact spin-preserving symmetry analogous to the electronic case by analyzing the crossover from weak antilocalization to weak localization and spin transmission as a function of extrinsic spin-orbit interaction strength.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interplay between spin-orbit interactions and a time-dependent electromagnetic field in monolayer graphene

We apply a circularly and linearly polarized terahertz field on a monolayer of graphene taking into account spin-orbit interactions of the intrinsic and Rashba type. It turns out that the field can not only be used to induce a gap in the energy spectrum, but also to close an existing gap due to the different reaction of the spin components on circularly polarized light. Signatures of spin-orbit coupling on the density of states of the driven system can be observed even for energies where the static density of states is independent of spin-orbit interactions. Furthermore it is shown that the time evolution of the spin polarization and the orbital dynamics of an initial wave packet can be modulated by varying the ratio of the spin-orbit coupling parameters. Assuming that the system acquires a quasi stationary state, the optical conductivity of the irradiated sample is calculated. Our results confirm the multi step nature of the conductivity obtained recently, where the number of intermediate steps can be changed by adjusting the spin-orbit coupling parameters and the orientation of the field.

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preprint2013arXiv

Plasmons and screening in a monolayer of MoS$_2$

We investigate the dynamical dielectric function of a monolayer of molybdenum disulfide within the random phase approximation. While in graphene damping of plasmons is caused by interband transitions, due to the large direct band gap in monolayer MoS$_2$ collective charge excitations enter the intraband electron hole continuum similar to the situation in two-dimensional electron and hole gases. Since there is no electron-hole symmetry in MoS$_2$, the plasmon energies in p- and n-doped samples clearly differ. The breaking of spin degeneracy caused by the large intrinsic spin-orbit interaction leads to a beating of Friedel oscillations for sufficiently large carrier concentrations, for holes as well as for electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Plasmons in spin-orbit coupled two-dimensional hole gas systems

We study the dynamical dielectric function of a two-dimensional hole gas, exemplified on [001]-GaAs and InAs quantum wells, within the Luttinger model extended to the two lowest subbands including bulk and structure inversion asymmetric terms. The plasmon dispersion shows a pronounced anisotropy for GaAs- and InAs-based systems. In GaAs this leads to a suppression of plasmons due to Landau damping in some orientations. Due to the large Rashba contribution in InAs, the lifetime of plasmons can be controlled by changing the electric field. This effect is potentially useful in plasmon field effect transistors as previously proposed for electron gases.

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preprint2012arXiv

Dielectric function, screening, and plasmons of graphene in the presence of spin-orbit interactions

We study the dielectric properties of graphene in the presence of Rashba and intrinsic spin-orbit interactions in their most general form, i.e., for arbitrary frequency, wave vector, doping, and spin-orbit coupling (SOC) parameters. The main result consists in the derivation of closed analytical expressions for the imaginary as well as for the real part of the polarization function. Several limiting cases, e.g., the case of purely Rashba or purely intrinsic SOC, and the case of equally large Rashba and intrinsic coupling parameters are discussed. In the static limit the asymptotic behavior of the screened potential due to charged impurities is derived. In the opposite limit ($q=0$, $ω\to0$), an analytical expression for the plasmon dispersion is obtained and afterwards compared to the numerical result. Our result can also be applied to related systems such as bilayer graphene or topological insulators.

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preprint2011arXiv

Dynamical current-current susceptibility of gapped graphene

We present analytical expressions for the current-current correlation function in graphene for arbitrary frequency, wave vector, doping, and band gap induced by a mass term. In the static limit we analyze the Landau (orbital) and Pauli magnetization, as well as the Lindhard correction which describes Friedel and RKKY oscillations. In the nonrelativistic limit we compare our results with the situation of the usual two-dimensional electron gas (2DEG). We find that the orbital magnetic susceptibility (OMS) in gapped graphene is smeared out on an energy scale given by the inverse mass. The nonrelativistic limit of the plasmon dispersion and the Lindhard function reproduces the results of the 2DEG. The same conclusion is true for the Pauli part of the susceptibility. The peculiar band structure of gapped graphene leads to pseudospin paramagnetism and thus to a special form of the OMS.

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