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Anatoly Efimov

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Published work

3 published item(s)

preprint2015arXiv

Electrical control of near-field energy transfer between quantum dots and 2D semiconductors

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.

preprint2015arXiv

Synchrotron radiation of higher order soliton

We demonstrate radiation mechanism exhibited by higher order soliton. In a course of its evolution higher order soliton emits polychromatic radiation resulting in appearance of multipeak frequency comb like spectral band. The shape and spectral position of this band can be effectively controlled by the relative strength of the third order dispersion. An analytical description is completely corroborated by numerical simulations. An analogy between this radiation and the radiation of moving charges is presented. For longer pulses the described effect persists also under the action of higher order perturbations such as Raman and self-steepening.

preprint2011arXiv

Probing Plasmons in Graphene by Resonance Energy Transfer

We propose a novel method to probe electronic excitations in graphene by monitoring the fluorescence quenching of a semiconductor quantum dot (or a dye molecule) due to the resonance energy transfer to the graphene sheet. We show how the dispersion relation of plasmons in graphene (as well as of other electronic excitations) can be accurately extracted by controlling the backgate voltage and the distance between quantum dot and graphene.