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Researcher profile

A. K. M. Newaz

A. K. M. Newaz contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.ed-phphysics.flu-dynphysics.ins-det

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Published work

6 published item(s)

preprint2020arXiv

A high precision falling-ball viscometer using a fast camera

This paper describes a simple and inexpensive method of measuring viscosity of a Newtonian fluid using the ball drop technique and an inexpensive point and shoot ~1000 frame per second camera. We successfully measured the viscosity of glycerol and glycerol-water mixture with high precision. We used three different size copper balls of diameters 0.8 mm, 1.59 mm, and 2.38 mm to check the accuracy of the measured viscosity in different concentrations of glycerol-water mixer solutions ranging from 50% to 100% (pure glycerol). Our measurements are in excellent agreement with the measurements conducted by other standard techniques. The simple and inexpensive techniques and physics we present in this manuscript can be employed to create a simple viscosity measurement setup for learning about complex fluid mechanics even at the undergraduate laboratory and high school teaching laboratory.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electrical control of near-field energy transfer between quantum dots and 2D semiconductors

We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogenous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient non-radiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 lead to large (~500%) changes in the FRET rate. This, in turn, allows for up to ~75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Probing excitonic states in ultraclean suspended two-dimensional semiconductors by photocurrent spectroscopy

The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain >1,000) and fast (response time <1ms) photoresponse combined with the high quality of our devices allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we estimate an extremely large binding energy for band-edge excitons, Ebind > 570meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. The analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical Control of Optical Properties of Monolayer MoS$_2$

We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS$_2$) configured in field effect transistor geometry. We observe an hundredfold increase in photoluminescence intensity and an increase in absorption at ~660 nm in these devices when an external gate voltage is decreased from +50 V to -50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS$_2$ devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS$_2$ with charge carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene Transistor as a Probe for Streaming Potential

We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the parameters of the fluid flow to demonstrate graphene-based mass flow and ionic concentration sensing. We successfully detect a flow as small as~70nL/min, and detect a change in the ionic concentration as small as ~40nM.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment

Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene&#39;s Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional graphene devices on SiO2 substrates and possibly for the recently reported high-mobility suspended and supported devices. An attractive approach to reduce such scattering is to place graphene in an environment with high static dielectric constant κ that would effectively screen the electric field due to the impurities. However, experiments so far report only a modest effect of high-κ environment on mobility. Here, we investigate the effect of the dielectric environment of graphene by studying electrical transport in multi-terminal graphene devices that are suspended in liquids with κ ranging from 1.9 to 33. For non-polar liquids (κ<5) we observe a rapid increase of μ with κ and report a record room-temperature mobility as large as ~60,000 cm2/Vs for graphene devices in anisole (κ=4.3), while in polar liquids (κ>18) we observe a drastic drop in mobility. We demonstrate that non-polar liquids enhance mobility by screening charged impurities adsorbed on graphene, while charged ions in polar liquids cause the observed mobility suppression. Furthermore, using molecular dynamics simulation we establish that scattering by out-of-plane flexural phonons, a dominant scattering mechanism in suspended graphene in vacuum at room temperature, is suppressed by the presence of liquids. We expect that our findings may provide avenues to control and reduce carrier scattering in future graphene-based electronic devices.

0 citations0 reviewsNo code linkedOpen access