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Anat Siddharth

Anat Siddharth contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Near ultraviolet photonic integrated lasers based on silicon nitride

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. Using self-injection locking to a high Q (0.4 $\times$ 10$^6$) photonic integrated microresonator we observe a phase noise reduction of the Fabry-Pérot laser at 461 nm by a factor greater than 100$\times$, limited by the device quality factor and back-reflection.

preprint2022arXiv

Tightly confining lithium niobate photonic integrated circuits and lasers

Photonic integrated circuits are indispensible for data transmission within modern datacenters and pervade into multiple application spheres traditionally limited for bulk optics, such as LiDAR and biosensing. Of particular interest are ferroelectrics such as Lithium Niobate, which exhibit a large electro-optical Pockels effect enabling ultrafast and efficient modulation, but are difficult to process via dry etching . For this reason, etching tightly confining waveguides - routinely achieved in silicon or silicon nitride - has not been possible. Diamond-like carbon (DLC) was discovered in the 1950s and is a material that exhibits an amorphous phase, excellent hardness, and the ability to be deposited in nano-metric thin films. It has excellent thermal, mechanical, and electrical properties, making it an ideal protective coating. Here we demonstrate that DLC is also a superior material for the manufacturing of next-generation photonic integrated circuits based on ferroelectrics, specifically Lithium Niobate on insulator (LNOI). Using DLC as a hard mask, we demonstrate the fabrication of deeply etched, tightly confining, low loss photonic integrated circuits with losses as low as 5.6 dB/m. In contrast to widely employed ridge waveguides, this approach benefits from a more than 1 order of magnitude higher area integration density while maintaining efficient electro-optical modulation, low loss, and offering a route for efficient optical fiber interfaces. As a proof of concept, we demonstrate a frequency agile hybrid integrated III-V Lithium Niobate based laser with kHz linewidth and tuning rate of 0.7 Peta-Hertz per second with excellent linearity and CMOS-compatible driving voltage. Our approach can herald a new generation of tightly confining ferroelectric photonic integrated circuits.

preprint2022arXiv

Ultrafast tunable lasers using lithium niobate integrated photonics

Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications ranging from 5G telecommunication and microwave photonics to microwave-to-optical quantum interfaces. Lithium niobate integrated photonic circuits could equally be the basis of integrated narrow-linewidth frequency-agile lasers. Pioneering work on polished lithium niobate crystal resonators has led to the development of electrically tunable narrow-linewidth lasers. Here we report low-noise frequency-agile lasers based on lithium niobate integrated photonics and demonstrate their use for coherent laser ranging. This is achieved through heterogeneous integration of ultra-low-loss silicon nitride photonic circuits with thin-film lithium niobate via direct wafer bonding. This platform features low propagation loss of 8.5 dB/m enabling narrow-linewidth lasing (intrinsic linewidth of 3 kHz) by self-injection locking to a III-V semiconductor laser diode. The hybrid mode of the resonator allows electro-optical laser frequency tuning at a speed of 12 PHz/s with high linearity, low hysteresis and while retaining narrow linewidth. Using this hybrid integrated laser, we perform a proof-of-concept FMCW LiDAR ranging experiment, with a resolution of 15 cm. By fully leveraging the high electro-optic coefficient of lithium niobate, with further improvements in photonic integrated circuits design, these devices can operate with CMOS-compatible voltages, or achieve mm-scale distance resolution. Endowing low loss silicon nitride integrated photonics with lithium niobate, gives a platform with wide transparency window, that can be used to realize ultrafast tunable lasers from the visible to the mid-infrared, with applications from OCT and LiDAR to environmental sensing.