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Researcher profile

Grigory Lihachev

Grigory Lihachev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticsphysics.app-ph

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Published work

5 published item(s)

preprint2022arXiv

Near ultraviolet photonic integrated lasers based on silicon nitride

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. Using self-injection locking to a high Q (0.4 $\times$ 10$^6$) photonic integrated microresonator we observe a phase noise reduction of the Fabry-Pérot laser at 461 nm by a factor greater than 100$\times$, limited by the device quality factor and back-reflection.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ultrafast tunable lasers using lithium niobate integrated photonics

Recent advances in the processing of thin-film LNOI have enabled low-loss photonic integrated circuits, modulators with improved half-wave voltage, electro-optic frequency combs and novel on-chip electro-optic devices, with applications ranging from 5G telecommunication and microwave photonics to microwave-to-optical quantum interfaces. Lithium niobate integrated photonic circuits could equally be the basis of integrated narrow-linewidth frequency-agile lasers. Pioneering work on polished lithium niobate crystal resonators has led to the development of electrically tunable narrow-linewidth lasers. Here we report low-noise frequency-agile lasers based on lithium niobate integrated photonics and demonstrate their use for coherent laser ranging. This is achieved through heterogeneous integration of ultra-low-loss silicon nitride photonic circuits with thin-film lithium niobate via direct wafer bonding. This platform features low propagation loss of 8.5 dB/m enabling narrow-linewidth lasing (intrinsic linewidth of 3 kHz) by self-injection locking to a III-V semiconductor laser diode. The hybrid mode of the resonator allows electro-optical laser frequency tuning at a speed of 12 PHz/s with high linearity, low hysteresis and while retaining narrow linewidth. Using this hybrid integrated laser, we perform a proof-of-concept FMCW LiDAR ranging experiment, with a resolution of 15 cm. By fully leveraging the high electro-optic coefficient of lithium niobate, with further improvements in photonic integrated circuits design, these devices can operate with CMOS-compatible voltages, or achieve mm-scale distance resolution. Endowing low loss silicon nitride integrated photonics with lithium niobate, gives a platform with wide transparency window, that can be used to realize ultrafast tunable lasers from the visible to the mid-infrared, with applications from OCT and LiDAR to environmental sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Platicon microcomb generation using laser self-injection locking

The past decade has witnessed major advances in the development of microresonator-based frequency combs (microcombs) that are broadband optical frequency combs with repetition rates in the millimeter-wave to microwave domain. Integrated microcombs can be manufactured using wafer-scale process and have been applied in numerous applications. Most of these advances are based on the harnessing of dissipative Kerr solitons (DKS) in optical microresonators with anomalous group velocity dispersion (GVD). However, microcombs can also be generated with normal GVD using dissipative localized structures that are referred to as "dark pulse", "switching wave" or "platicon". Importantly, as most materials feature intrinsic normal GVD, the requirement of dispersion engineering is significantly relaxed for platicon generation. Therefore while DKS microcombs require particular designs and fabrication processes, platicon microcombs can be readily built using standard CMOS-compatible platforms such as thin-film (i.e. typically below 300 nm) Si3N4. Yet laser self-injection locking that has been recently used to create highly compact integrated DKS microcomb modules has not been demonstrated for platicons. Here we report the first fully integrated platicon microcomb operating at a microwave-K-band repetition rate. Using laser self-injection locking of a DFB laser edge-coupled to a Si3N4 microresonator, platicons are electrically initiated and stably maintained, enabling a compact microcomb module without any complex control. We further characterize the phase noise of the platicon repetition rate and the pumping laser. The observation of self-injection-locked platicons facilitates future wide adoption of microcombs as a build-in block in standard photonic integrated architectures via commercial foundry service.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Monolithic piezoelectric control of soliton microcombs

High-speed laser frequency actuation is critical in all applications employing lasers and frequency combs, and is prerequisite for phase locking, frequency stabilization and stability transfer among multiple optical carriers. Soliton microcombs have emerged as chip-scale, broadband and low-power-consumption frequency comb sources.Yet, integrated microcombs relying on thermal heaters for on-chip actuation all exhibit only kilohertz actuation bandwidth. Consequently, high-speed actuation and locking of microcombs have been attained only with off-chip bulk modulators. Here, we present high-speed microcomb actuation using integrated components. By monolithically integrating piezoelectric AlN actuators on ultralow-loss Si3N4 photonic circuits, we demonstrate voltage-controlled soliton tuning, modulation and stabilization. The integrated AlN actuators feature bi-directional tuning with high linearity and low hysteresis, operate with 300 nW power and exhibit flat actuation response up to megahertz frequency, significantly exceeding bulk piezo tuning bandwidth. We use this novel capability to demonstrate a microcomb engine for parallel FMCW LiDAR, via synchronously tuning the laser and microresonator. By applying a triangular sweep at the modulation rate matching the frequency spacing of HBAR modes, we exploit the resonant build-up of bulk acoustic energy to significantly lower the required driving to a CMOS voltage of only 7 Volts. Our approach endows soliton microcombs with integrated, ultralow-power-consumption, and fast actuation, significantly expanding the repertoire of technological applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Zero-dispersion Kerr solitons in optical microresonators

Solitons are shape preserving waveforms that are ubiquitous across nonlinear dynamical systems and fall into two separate classes, that of bright solitons, formed in the anomalous group velocity dispersion regime, and `dark solitons' in the normal dispersion regime. Both types of soliton have been observed in BEC, hydrodynamics, polaritons, and mode locked lasers, but have been particularly relevant to the generation of chipscale microresonator-based frequency combs (microcombs), used in numerous system level applications in timing, spectroscopy, and communications. For microcombs, both bright solitons, and alternatively dark pulses based on interlocking switching waves, have been studied. Yet, the existence of localized dissipative structures that fit between this dichotomy has been theoretically predicted, but proven experimentally elusive. Here we report the discovery of dissipative structures that embody a hybrid between switching waves and dissipative solitons, existing in the regime of (nearly) vanishing group velocity dispersion where third-order dispersion is dominant, hence termed as `zero-dispersion solitons'. These dissipative structures are formed via collapsing switching wave fronts, forming clusters of quantized solitonic sub-structures. The switching waves are formed directly via synchronous pulse-driving of a photonic chip-based Si3N4 microresonator. The resulting frequency comb spectrum is extremely broad in both the switching wave and zero-dispersion soliton regime, reaching 136 THz or 97% of an octave. Fourth-order dispersion engineering results in dual-dispersive wave formation, and a novel quasi-phase matched wave related to Faraday instability. This exotic unanticipated dissipative structure expands the domain of Kerr cavity physics to the regime near zero-dispersion and could present a superior alternative to conventional solitons for broadband comb generation.

0 citations0 reviewsNo code linkedOpen access