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Ambesh Dixit

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cond-mat.mtrl-sci cond-mat.supr-con cond-mat.str-el

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preprint2021arXiv

Room Temperature Structural, Magnetic and Dielectric Characteristics of La Doped CuO Bulk Multiferroic

In this manuscript, we report room temperature structural, microstructural, optical, dielectric, and magnetic properties of CuO and Cu0.995La0.005 ceramics, synthesized by solid-state reaction method. La doping in CuO leads to the evolution of compact and dense microstructure with reduced porosity. Due to noticeable differences in the ionic radii of, La doping creates vacancy defects which induce considerable strain in the CuO lattice resulting in a reduction in the lattice parameters and cell volume. However, both ceramics processes a similar monoclinic structure with the C2/c space group. Detailed characterization using XPS, Raman, and FTIR spectroscopy confirmed the incorporation of the La3+ in CuO lattice. Interestingly, La doping enhances the dielectric constant by more than three times and results in a reduced leakage current. The onset of a large dielectric constant is attributed to dense microstructure and strain/distortion in CuO lattice after La doping. Additionally, the band-gap of Cu0.995La0.005 ceramics decreases which is attributed to increased vacancy defect concentration that creates intermediate dopant energy level within bandgap of CuO matrix. Furthermore, improvement in magnetic and dielectric properties is also discussed and correlated with the grain size in La-doped CuO.

preprint2018arXiv

MoSSe Janus monolayer as a promising two dimensional material for NO2 and NO gas sensor applications

Gas sensing mechanism of H2S, NH3, NO2 and NO toxic gases on transition metal dichalcogenides based Janus MoSSe monolayers are investigated using the density functional theory. The pristine and defect included MoSSe layers are considered as a host material for adsorption study. Three types of defects (i) molybdenum vacancy, (ii) selenium vacancy, and (iii) sulfur/selenium vacancy are studied to understand their impact on electronic properties and sensing of these gas molecules. The formation energy is computed to predict the stability of these defects and noticed that selenium vacancy is the most stable among other defects. The adsorption of gas molecules is evaluated in terms of adsorption energy, vertical height, charge difference density, Bader charge analysis, electronic and magnetic properties. The maximum adsorption energy for H2S, NH3, NO2 and NO molecules on pristine Janus MoSSe monolayer are ~ -0.156eV, -0.203eV, -0.252eV, and -0.117eV, respectively. Selenium and sulfur/selenium defects significantly improve the sensing of the gas molecules. NO2 gas molecule dissociates and forms oxygen doped NO adsorption in selenium and sulfur/selenium defect included MoSSe Janus monolayer. The adsorption energy values are ~ -3.360eV and -3.404eV for Se and S/Se defects included MoSSe layer, respectively. Further, the adsorption of NO2 molecule induced about 1/mu/B magnetic moment. In contrast, NO molecule showed chemisorption on the surface of the selenium and sulfur/selenium defect included Janus MoSSe monolayers, whereas H2S and NH3 molecules showed physisorption with their adsorption energies in the range of -0.146 to -0.238 eV and -0.140 to -0.281 eV, respectively. The adsorption of H2S, NH3, NO2 and NO molecule on the pristine and defected monolayers suggest that selenium and sulfur/selenium vacancy defects are more prominent for NO2 and NO gas molecule adsorption.

preprint2016arXiv

Influence of Ni doping on critical parameters of PdTe superconductor

We report the effect of Ni doping on superconductivity of PdTe. The superconducting parameters like critical temperature (Tc), upper critical field (Hc2) and normalized specific-heat jump are reported for Ni doped Pd1-xNixTe. The samples of series Pd1-xNixTe with nominal compositions x=0, 0.01, 0.05, 0.07, 0.1, 0.15, 0.2, 0.3 and 1.0 are synthesized via vacuum shield solid state reaction route. All the studied samples of Pd1-xNixTe series are crystallized in hexagonal crystal structure as refined by Rietveld method to space group P63/mmc. Both the electrical resistivity and magnetic measurements revealed that Tc decreases with increase of Ni concentration in Pd1-xNixTe. The magneto-transport measurements suggest that flux is better pinned for 20% Ni doped PdTe as compared to other compositions of Pd1-xNixTe. The effect and contribution of Ni 3d electron to electronic structure and density of states near Fermi level in Pd1-xNixTe are also studied using first-principle calculations within spin polarized local density approximation. The overlap of bands at Fermi level for NiTe is larger as compared to PdTe. Also the density of states just below Fermi level (in conduction band) drops much lower for PdTe than as for NiTe. Summarily, Ni doping in Pd1-xNixTe superconductor suppresses superconductivity moderately and also Ni is of non magnetic character in these compounds.

preprint2015arXiv

beta phase manganese dioxide nanorods Synthesis and characterization for supercapacitor applications

Manganese dioxide nanorods were synthesized using novel solution route. The phase and microstructure of synthesized materials were identified using X ray diffraction, scanning electron and transmission electron microscopic measurements. The material crystallizes into beta crystallographic phase and consists of nanorods of diameter in the range of about 10-14 nm and length about 50 nm. The Fourier Transform Infrared (FTIR) spectroscopic and thermogravimetric analysis (TGA) measurements were carried out to understand the materials microscopic and thermal properties. The material exhibits characteristic Mn O vibrational frequencies, confirming the phase purity of material. The electrochemical performance of beta MnO2 nanorods was evaluated using cyclic voltammetry and galvanostatic charge and discharge measurements using inhouse developed supercapacitor device assembly. We observed about 125 F per g specific capacitance for beta MnO2 nanorods electrode materials.

preprint2015arXiv

PdTe a 4.5K Type II BCS Superconductor

We report on the structure and physical properties of bulk Palladium Tellurium superconductor, which is synthesized via quartz vacuum encapsulation technique at 750 C. The as synthesized compound is crystallized in hexagonal crystal structure. Magnetization and Magneto-transport measurements provided the values of lower and upper critical field to be 250 and 1200 Gauss respectively at 2 Kelvin. The Coherence length and GL parameter are estimated from the experimentally determined upper and lower critical fields, which are 45 nm and 1.48 respectively. The jump in Cp(T) at Tc is found to be 1.33 and the Debye temperature and electronic specific heat constant are 203 Kelvin and 6.01mJ/mole-K2 respectively.

preprint2009arXiv

Magnetic Structure and Susceptibility of CoSe$_2$O$_5$: A Low Dimensional Antiferromagnet

CoSe$_2$O$_5$ has a crystal structure consisting of zig-zag chains of edge shared CoO$_6$ octahedra running along the c axis, with the chains separated by Se$_2$O$_5^{2-}$ units. Magnetic susceptibility measurements indicate a transition at 8.5 K to an ordered state. We investigate here the nature of this magnetic ordering using magnetization and specific heat measurements in addition to powder neuttron diffraction. A transition to long-range antiferromagnetic order is found below $T_N$ = 8.5 K as identified by magnetic susceptibility measurements and magnetic Bragg reflections, with a propagation vector $\mathbf{k}$ = 0. The magnetic structure shows that the moments align perpendicular to the c-axis, but with the spins canting with respect to the a axis by, alternately, $+8^\circ$ and $-8^\circ$. Interestingly, the low-field magnetic susceptibility does not show the anticipated cusp-like behavior expected for a well-ordered antiferromagnet. When the susceptibility is acquired under field-cooling conditions under a 10 kOe field, the the usual downturn expected for antiferromagnetic ordering is obtained. Heat capacity measurements at low temperatures indicate the presence of gapped behavior with a gap of 6.5 K.