Researcher profile

Alyssa B. Apsel

Alyssa B. Apsel contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2020arXiv

Identifying Unused RF Channels Using Least Matching Pursuit

Cognitive radio aims at identifying unused radio-frequency (RF) bands with the goal of re-using them opportunistically for other services. While compressive sensing (CS) has been used to identify strong signals (or interferers) in the RF spectrum from sub-Nyquist measurements, identifying unused frequencies from CS measurements appears to be uncharted territory. In this paper, we propose a novel method for identifying unused RF bands using an algorithm we call least matching pursuit (LMP). We present a sufficient condition for which LMP is guaranteed to identify unused frequency bands and develop an improved algorithm that is inspired by our theoretical result. We perform simulations for a CS-based RF whitespace detection task in order to demonstrate that LMP is able to outperform black-box approaches that build on deep neural networks.

preprint2020arXiv

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities.