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Ali Khademi

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Published work

3 published item(s)

preprint2021arXiv

Additive Average Schwarz Method for Elliptic Mortar Finite Element Problems with Highly Heterogeneous Coefficients

In this paper, we extend the additive average Schwarz method to solve second order elliptic boundary value problems with heterogeneous coefficients inside the subdomains and across their interfaces by the mortar technique, where the mortar finite element discretization is on nonmatching meshes. In this two-level method, we enrich the coarse space in two different ways, i.e., by adding eigenfunctions of two variants of the generalized eigenvalue problems. We prove that the condition numbers of the systems of algebraic equations resulting from the extended additive average Schwarz method, corresponding to both coarse spaces, are of the order O(H/h) and independent of jumps in the coefficients, where H and h are the mesh parameters.

preprint2020arXiv

Matters Arising: Modeling and observation of mid-infrared nonlocality in effective epsilon-near-zero ultranarrow coaxial apertures

In "Modeling and observation of mid-infrared nonlocality in effective epsilon-near-zero ultranarrow coaxial apertures" the authors perform infrared transmission measurements on coaxial aperture arrays in metal films. They claim that the blue-shift of the resonances is the result of nonlocality. They claim that roughness will not produce a shift. This is contrary to past results in plasmonics, to our simulations and to past published claims from some of the same authors. Furthermore, the effect of planarization that occurs for atomic layer deposition, as has been reported elsewhere, will produce a blue-shift. Finally, discrepancies between different nonlocal models, time-dependent density functional theory and other experimental observations all call into question the accuracy of the particular nonlocal model chosen for this regime.

preprint2016arXiv

Alkali doping of graphene: the crucial role of high temperature annealing

The doping efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high doping regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of doping that could be achieved: doping saturated at $Δn = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated doping rose one order of magnitude to $Δn = 2\times 10^{14}$ e$^-$/cm$^2$.