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Ebrahim Sajadi

Ebrahim Sajadi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2016arXiv

Alkali doping of graphene: the crucial role of high temperature annealing

The doping efficiency of lithium deposited at cryogenic temperatures on epitaxial and CVD monolayer graphene has been investigated under ultra-high vacuum conditions. Change of charge carrier density was monitored by gate voltage shift of the Dirac point and by Hall measurements, in low and high doping regimes. It was found that pre-annealing the graphene greatly enhanced the maximum levels of doping that could be achieved: doping saturated at $Δn = 2\times 10^{13}$ e$^-$/cm$^2$ without annealing, independent of sample type or previous processing; after a 900 K anneal, the saturated doping rose one order of magnitude to $Δn = 2\times 10^{14}$ e$^-$/cm$^2$.

preprint2016arXiv

Edge Transport in the Trivial Phase of InAs/GaSb

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.

preprint2014arXiv

Low-temperature illumination and annealing of ultra-high quality quantum wells

The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.