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Jonathan P. Bird

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3works
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4close collaborators

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3 publications

preprint2022arXiv

Quantum Sensing of Single Phonons via Phonon Drag in Two-Dimensional Materials

The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong coupling of their electrons to surface-polar phonons, van der Waals heterostructures can offer a suitable platform for phonon sensing, capable of resolving energy transfer at the single-phonon level. The geometry we consider is one in which a drag momentum is exerted on electrons in a graphene layer, by a single out-of-equilibrium phonon in a dielectric layer of hexagonal boron nitride, giving rise to a measurable induced voltage (VdragV_{\rm drag}). Our numerical solution of the Boltzmann Transport Equation shows that this drag voltage can reach a level of a few hundred microvolts per phonon, well above experimental detection limits. Furthermore, we predict that VdragV_{\rm drag} should be highly insensitive to the mobility of carriers in the graphene layer and to increasing the temperature to at least 300 K, offering the potential of a versatile material platform for single-phonon sensing.

preprint2021arXiv

Covalent 2D Cr2_2Te3_3 ferromagnet

To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr2_2Te3_3 with a thickness down to one-unit-cell. The 2D Cr2_2Te3_3 crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr2_2Te3_3, suggesting its potential application for injecting carriers with high spin polarization into spintronic devices.

preprint2020arXiv

Investigation of laser-induced-metal phase of MoTe2\mathrm{MoTe}_{2} and its contact property via scanning gate microscopy

Although semiconductor to metal phase transformation of MoTe2_{2} by high-density laser irradiation of more than 0.3 MW/cm2^{2} has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe2_{2}. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe2_{2}/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Schottky barrier (a diffusion potential) is always formed at the Pd/2H-MoTe2_{2} boundary and obstacles a carrier transport while an Ohmic contact is realized at the 2H-MoTe2_{2}/LIM phase junction for both n- and p-type carriers.

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