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Alexie M. Kolpak

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Published work

6 published item(s)

preprint2020arXiv

Improved Description of Perovskite Oxide Crystal Structure and Electronic Properties using Self-Consistent Hubbard $U$ Corrections from ACBN0

The wide variety of complex physical behavior exhibited in transition metal oxides, particularly the perovskites A$B$O$_3$, makes them a material family of interest in many research areas, but the drastically different electronic structures possible in these oxides raises challenges in describing them accurately within density functional theory (DFT) and related methods. Here we evaluate the ability of the ACBN0, a recently developed first-principles approach to computing the Hubbard $U$ correction self-consistently, to describe the structural and electronic properties of the first-row transition metal perovskites with $\left(B=\textrm{V}-\textrm{Ni} \right)$. ACBN0 performs competitively with hybrid functional approaches such as the Heyd-Scuseria-Ernzerhof (HSE) functional even when they are optimized empirically, at a fraction of the computational cost. ACBN0 also describes both the structure and band gap of the oxides more accurately than a conventional Hubbard $U$ correction performed by using $U$ values taken from the literature.

preprint2016arXiv

Directional Phonon Suppression Function as a Tool for the Identification of Ultralow Thermal Conductivity Materials

Boundary-engineering in nanostructures has the potential to dramatically impact the development of materials for high-efficiency conversion of thermal energy directly into electricity. In particular, nanostructuring of semiconductors can lead to strong suppression of heat transport with little degradation of electrical conductivity. Although this combination of material properties is promising for thermoelectric materials, it remains largely unexplored. In this work, we introduce a novel concept, the directional phonon suppression function, to unravel boundary-dominated heat transport in unprecedented detail. Using a combination of density functional theory and the Boltzmann transport equation, we compute this quantity for nanoporous silicon materials. We first compute the thermal conductivity for the case with aligned circular pores, confirming a significant thermal transport degradation with respect to the bulk. Then, by analyzing the information on the directionality of phonon suppression in this system, we identify a new structure of rectangular pores with the same porosity that enables a four-fold decrease in thermal transport with respect to the circular pores. Our results illustrate the utility of the directional phonon suppression function, enabling new avenues for systematic thermal conductivity minimization and potentially accelerating the engineering of next-generation thermoelectric devices.

preprint2015arXiv

Temperature-dependent thermal conductivity in nanoporous materials studied by the Boltzmann Transport Equation

Nanostructured materials exhibit low thermal conductivity because of the additional scattering due to phonon-boundary interactions. As these interactions are highly sensitive to the mean free path (MFP) of a given phonon mode, MFP distributions in nanostructures can be dramatically distorted relative to bulk. Here we calculate the MFP distribution in periodic nanoporous Si for different temperatures, using the recently developed MFP-dependent Boltzmann Transport Equation. After analyzing the relative contribution of each phonon branch to thermal transport in nanoporous Si, we find that at room temperature optical phonons contribute 18 % to heat transport, compared to 5% in bulk Si. Interestingly, we observe a steady thermal conductivity in the nanoporous materials over a temperature range 200 K < T < 300 K, which we attribute to the ballistic transport of acoustic phonons with long intrinsic MFP. These results, which are also consistent with a recent experimental study, shed light on the origin of the reduction of thermal conductivity in nanostructured materials, and could contribute to multiscale heat transport engineering, in which the bulk material and geometry are optimized concurrently.

preprint2010arXiv

A First-Principles Study of the Electronic Reconstructions of LaAlO3/SrTiO3 Heterointerfaces and Their Variants

We present a first-principles study of the electronic structures and properties of ideal (atomically sharp) LaAlO3/SrTiO3 (001) heterointerfaces and their variants such as a new class of quantum well systems. We demonstrate the insulating-to-metallic transition as a function of the LaAlO3 film thickness in these systems. After the phase transition, we find that conduction electrons are bound to the n-type interface while holes diffuse away from the p-type interface, and we explain this asymmetry in terms of a large hopping matrix element that is unique to the n-type interface. We build a tight-binding model based on these hopping matrix elements to illustrate how the conduction electron gas is bound to the n-type interface. Based on the `polar catastrophe' mechanism, we propose a new class of quantum wells at which we can manually control the spatial extent of the conduction electron gas. In addition, we develop a continuous model to unify the LaAlO3/SrTiO3 interfaces and quantum wells and predict the thickness dependence of sheet carrier densities of these systems. Finally, we study the external field effect on both LaAlO3/SrTiO3 interfaces and quantum well systems. Our systematic study of the electronic reconstruction of LaAlO3/SrTiO3 interfaces may serve as a guide to engineering transition metal oxide heterointerfaces.

preprint2010arXiv

Electronic and magnetic properties of SrTiO3/LaAlO3 interfaces from first principles

A number of intriguing properties emerge upon the formation of the epitaxial interface between the insulating oxides LaAlO3 and SrTiO3. These properties, which include a quasi two-dimensional conducting electron gas, low temperature superconductivity, and magnetism, are not present in the bulk materials, generating a great deal of interest in the fundamental physics of their origins. While it is generally accepted that the novel behavior arises as a result of a combination of electronic and atomic reconstructions and growth-induced defects, the complex interplay between these effects remains unclear. In this report, we review the progress that has been made towards unraveling the complete picture of the SrTiO3/LaAlO3 interface, focusing primarily on present ab initio theoretical work and its relation to the experimental data. In the process, we highlight some key unresolved issues and discuss how they might be addressed by future experimental and theoretical studies.

preprint2004arXiv

Support-mediated activation and deactivation of Pt thin films

Using ab initio methods, we examine the the charge distribution at the interface of alpha-alumina-supported Pt films, and we consider the influence of this interface on CO adsorption. We demonstrate that a combination of electrostatic charge transfer and covalent bonding governs the interfacial interactions, and that these interactions play an important role in the metal reactivity. By modifying the interface and varying the Pt film thickness over a nanoscale range, CO adsorption can be significantly enhanced or diminished. These observations could be used to tune the reactivity of Pt particles.