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Researcher profile

Alexander Steppke

Alexander Steppke contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.app-ph

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Published work

3 published item(s)

preprint2023arXiv

Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures

The discovery of superconductivity in the quantum critical Kondo-lattice system YbRh2Si2 at an extremely low temperature of 2 mK has inspired efforts to perform high-resolution electrical resistivity measurements down to this temperature range in highly conductive materials. Here we show that control over the sample geometry by microstructuring using focused-ion-beam (FIB) techniques allows to reach ultra-low temperatures and increase signal-to-noise ratios (SNR) tenfold, without adverse effects to sample quality. In five experiments we show four-terminal sensing resistance and magnetoresistance measurements which exhibit sharp phase transitions at the Néel temperature, and Shubnikov-de-Haas (SdH) oscillations between 13 T and 18 T where we identified a new SdH frequency of 0.39 kT. The increased SNR allowed resistance fluctuation (noise) spectroscopy that would not be possible for bulk crystals, and confirmed intrinsic 1/f-type fluctuations. Under controlled strain, two thin microstructured samples exhibited a large increase of T_N from 67 mK up to 188 mK while still showing clear signatures of the phase transition and SdH oscillations. SQUID-based thermal noise spectroscopy measurements in a nuclear demagnetisation refrigerator down to 0.95 mK, show a sharp superconducting transition at T_c = 1.2 mK. These experiments demonstrate microstructuring as a powerful tool to investigate the resistance and the noise spectrum of highly conductive correlated metals over wide temperature ranges.

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preprint2022arXiv

The Superconductivity of Sr$_2$RuO$_4$ Under $c$-Axis Uniaxial Stress

Applying in-plane uniaxial pressure to strongly correlated low-dimensional systems has been shown to tune the electronic structure dramatically. For example, the unconventional superconductor Sr$_2$RuO$_4$ can be tuned through a single Van Hove singularity which results in a strong enhancement of both $T_\text{c}$ and $H_\text{c2}$. Out-of-plane ($c$ axis) uniaxial pressure is expected to tune the quasi-two-dimensional structure even more strongly, causing it to approach two Van Hove singularities simultaneously. Here we achieve a record value of $3.2$ GPa compression along the $c$ axis of Sr$_2$RuO$_4$. Although the rise in $H_\text{c2}$ shows that we are indeed approaching the van Hove points, $T_\text{c}$ is suppressed, a result that contradicts expectations based on simple two-dimensional models. As a first attempt to take the third dimension into account, we present three-dimensional calculations in the weak interaction limit, and discuss the extent to which they are consistent with observation. Our experimental results highlight the importance of out-of-plane effects in low-dimensional systems in general and provide new constraints on theories of the pairing interaction in Sr$_2$RuO$_4$.

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preprint2020arXiv

Rigid platform for applying large tunable strains to mechanically delicate samples

Response to uniaxial stress has become a major probe of electronic materials. Tuneable uniaxial stress may be applied using piezoelectric actuators, and so far two methods have been developed to couple samples to actuators. In one, actuators apply force along the length of a free, beam-like sample, allowing very large strains to be achieved. In the other, samples are affixed directly to piezoelectric actuators, allowing study of mechanically delicate materials. Here, we describe an approach that merges the two: thin samples are affixed to a substrate, that is then pressurized uniaxially using piezoelectric actuators. Using this approach, we demonstrate application of large elastic strains to mechanically delicate samples: the van der Waals-bonded material FeSe, and a sample of CeAuSb$_2$ that was shaped with a focused ion beam.

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