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Alexander Spott appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 μm. Structures were fabricated using electron-beam lithography on the silicon-on-sapphire material system. Waveguide losses of 4.0 +/- 0.7 dB/cm are achieved, as well as Q-values of 3.0 k.
Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs currently exceed 6.5V . Here we show an MZI modulator based on an electrooptic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69V, and a bandwidth of 500 MHz. We also show that there are also paths to significantly improve both the bandwidth and drive voltage . Our silicon-organic modulator has an intrinsic power consumption less than 0.66 pJ/bit, nearly an order of magnitude improvement over the previous lowest energy silicon MZI .
It has recently been shown that silicon nanophotonic waveguides can be used to construct all of the components of a photonic data transmission system on a single chip. These components can be integrated together with CMOS electronics to create complex electronic-photonic integrated circuits. It has also emerged that the high field confinement of silicon nanoscale guides enables exciting new applications, from chipscale nonlinear optics to biosensors and light-force activated devices. To date, most of the experiments in silicon waveguides have been at wavelengths in the near-infrared, ranging from 1.1-2 microns. Here we show that single-mode silicon nano-waveguides can be used at mid-infrared wavelengths, in particular at 4.5 microns, or 2222.2 1/cm. This idea has appeared in theoretical literature, but experimental realization has been elusive. This result represents the first practical integrated waveguide system for the mid-infrared in silicon, and enables a range of new applications.