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Alex K. -Y. Jen

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Published work

4 published item(s)

preprint2015arXiv

Antenna-coupled silicon-organic hybrid integrated photonic crystal modulator for broadband electromagnetic wave detection

In this work, we design, fabricate and characterize a compact, broadband and highly sensitive integrated photonic electromagnetic field sensor based on a silicon-organic hybrid modulator driven by a bowtie antenna. The large electro-optic (EO) coefficient of organic polymer, the slow-light effects in the silicon slot photonic crystal waveguide (PCW), and the broadband field enhancement provided by the bowtie antenna, are all combined to enhance the interaction of microwaves and optical waves, enabling a high EO modulation efficiency and thus a high sensitivity. The modulator is experimentally demonstrated with a record-high effective in-device EO modulation efficiency of r33=1230pm/V. Modulation response up to 40GHz is measured, with a 3-dB bandwidth of 11GHz. The slot PCW has an interaction length of 300um, and the bowtie antenna has an area smaller than 1cm2. The bowtie antenna in the device is experimentally demonstrated to have a broadband characteristics with a central resonance frequency of 10GHz, as well as a large beam width which enables the detection of electromagnetic waves from a large range of incident angles. The sensor is experimentally demonstrated with a minimum detectable electromagnetic power density of 8.4mW/m2 at 8.4GHz, corresponding to a minimum detectable electric field of 2.5V/m and an ultra-high sensitivity of 0.000027V/m Hz^-1/2 ever demonstrated. To the best of our knowledge, this is the first silicon-organic hybrid device and also the first PCW device used for the photonic detection of electromagnetic waves. Finally, we propose some future work, including a Teraherz wave sensor based on antenna-coupled electro-optic polymer filled plasmonic slot waveguide, as well as a fully packaged and tailgated device.

preprint2014arXiv

Miniaturized Low-power Electro-optic Modulator Based on Silicon Integrated Nanophotonics and Organic Polymers

We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half-wave switching-voltage is measured to be Vπ=0.97V over optical spectrum range of 8nm, corresponding to a record-high effective in-device r33 of 1190pm/V and Vπ L of 0.291Vmm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an ultra-high efficiency of 89pm/V in the slot. In addition, to achieve high-speed modulation, silicon PCW is selectively doped to reduce RC time delay. The 3-dB RF bandwidth of the modulator is measured to be 11GHz, and a modulation response up to 40GHz is observed.

preprint2014arXiv

Wide optical spectrum range, sub-volt, compact modulator based on electro-optic polymer refilled silicon slot photonic crystal waveguide

We design and demonstrate a compact and low-power band-engineered electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW) modulator. The EO polymer is engineered for large EO activity and near-infrared transparency. A PCW step coupler is used for optimum coupling to the slow-light mode of the band-engineered PCW. The half-wave switching-voltage is measured to be Vπ=0.97+-0.02V over optical spectrum range of 8nm, corresponding to the effective in-device r33 of 1190pm/V and Vπ L of 0.291+-0.006V mm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an efficiency of 89pm/V in the slot.

preprint2010arXiv

Sub-Volt Silicon-Organic Electrooptic Modulator

Lowering the operating voltage of electrooptic modulators is desirable for a variety of applications, most notably in analog photonics , and digital data communications . In particular for digital systems such as CPUs, it is desirable to develop modulators that are both temperature-insensitive and compatible with typically sub-2V CMOS electronics ; however, drive voltages in silicon-based MZIs currently exceed 6.5V . Here we show an MZI modulator based on an electrooptic polymer-clad silicon slot waveguide, with a halfwave voltage of only 0.69V, and a bandwidth of 500 MHz. We also show that there are also paths to significantly improve both the bandwidth and drive voltage . Our silicon-organic modulator has an intrinsic power consumption less than 0.66 pJ/bit, nearly an order of magnitude improvement over the previous lowest energy silicon MZI .