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Alexander A. High

Alexander A. High contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2021arXiv

Engineering the Radiative Dynamics of Thermalized Excitons with Metal Interfaces

As a platform for optoelectronic devices based on exciton dynamics, monolayer transition metal dichalcogenides (TMDCs) are often placed near metal interfaces or inside planar cavities. While the radiative properties of point dipoles at metal interfaces has been studied extensively, those of excitons, which are delocalized and exhibit a temperature-dependent momentum distribution, lack a thorough treatment. Here, we analyze the emission properties of excitons in TMDCs near planar metal interfaces and explore their dependence on exciton center-of-mass momentum, transition dipole orientation, and temperature. Defining a characteristic energy scale $k_B T_c = (\hbar k)^2/2m$~($k$ being the radiative wavevector and $m$ the exciton mass), we find that at temperatures $T\gg T_c$ and low densities where the momentum distribution can be characterized by Maxwell-Boltzmann statistics, the modified emission rates~(normalized to free space) behave similarly to point dipoles at temperatures $T\gg T_c$. This similarity in behavior arises due to the broad nature of wavevector components making up the exciton and point dipole emission. On the other hand, the narrow momentum distribution of excitons for $T<T_c$ can result in significantly different emission behavior as compared to point dipoles. These differences can be further amplified by considering excitons with a Bose Einstein distribution at high phase space densities. We find suppression or enhancement of emission relative to the point dipole case by several orders of magnitude. These insights can help optimize the performance of optoelectronic devices that incorporate 2D semiconductors near metal electrodes and can inform future studies of exciton radiative dynamics at low temperatures. Additionally, these studies show that nanoscale optical cavities are a viable pathway to generating long-lifetime exciton states in TMDCs.

preprint2021arXiv

Maximum refractive index of an atomic medium

It is interesting to observe that all optical materials with a positive refractive index have a value of index that is of order unity. Surprisingly, though, a deep understanding of the mechanisms that lead to this universal behavior seems to be lacking. Moreover, this observation is difficult to reconcile with the fact that a single, isolated atom is known to have a giant optical response, as characterized by a resonant scattering cross section that far exceeds its physical size. Here, we theoretically and numerically investigate the evolution of the optical properties of an ensemble of ideal atoms as a function of density, starting from the dilute gas limit, including the effects of multiple scattering and near-field interactions. Interestingly, despite the giant response of an isolated atom, we find that the maximum index does not indefinitely grow with increasing density, but rather reaches a limiting value $n\approx 1.7$. We propose an explanation based upon strong-disorder renormalization group theory, in which the near-field interaction combined with random atomic positions results in an inhomogeneous broadening of atomic resonance frequencies. This mechanism ensures that regardless of the physical atomic density, light at any given frequency only interacts with at most a few near-resonant atoms per cubic wavelength, thus limiting the maximum index attainable. Our work is a promising first step to understand the limits of refractive index from a bottom-up, atomic physics perspective, and also introduces renormalization group as a powerful tool to understand the generally complex problem of multiple scattering of light overall.

preprint2021arXiv

Tunable and Transferable Diamond Membranes for Integrated Quantum Technologies

Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform diamond membranes are synthesized via &#34;smart-cut&#34; and isotopically (12C) purified overgrowth. These membranes have tunable thicknesses (demonstrated 50 nm to 250 nm), are deterministically transferable, have bilaterally atomically flat surfaces (Rq <= 0.3 nm), and bulk-diamond-like crystallinity. Color centers are synthesized via both implantation and in-situ overgrowth incorporation. Within 110 nm thick membranes, individual germanium-vacancy (GeV-) centers exhibit stable photoluminescence at 5.4 K and average optical transition linewidths as low as 125 MHz. The room temperature spin coherence of individual nitrogen-vacancy (NV-) centers shows Ramsey spin dephasing times (T2*) and Hahn echo times (T2) as long as 150 us and 400 us, respectively. This platform enables the straightforward integration of diamond membranes that host coherent color centers into quantum technologies.

preprint2020arXiv

High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2

Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO2 on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.

preprint2018arXiv

Electrical control of interlayer exciton dynamics in atomically thin heterostructures

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal dichalcogenides (TMDs) enables the formation of excitons from electrons and holes in distinct layers, producing interlayer excitons with large binding energy and a long lifetime. Employing heterostructures of monolayer TMDs, we realize optical and electrical generation of long-lived neutral and charged interlayer excitons. We demonstrate the transport of neutral interlayer excitons across the whole sample that can be controlled by excitation power and gate electrodes. We also realize the drift motion of charged interlayer excitons using Ohmic-contacted devices. The electrical generation and control of excitons provides a new route for realizing quantum manipulation of bosonic composite particles with complete electrical tunability.