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Alex Hiro Mayo

Alex Hiro Mayo contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$

Topological materials have drawn increasing attention owing to their rich quantum properties, as highlighted by a large intrinsic anomalous Hall effect (AHE) in Weyl and nodal-line semimetals. However, the practical applications for topological electronics have been hampered by the difficulty in the external control of the band topology. Here we demonstrate a magnetic-field-induced switching of band topology in $α{\mathrm{-EuP}}_3$, a magnetic semimetal with a layered crystal structure derived from black phosphorus. When the magnetic field is applied perpendicular to the single mirror plane of the monoclinic structure, a giant AHE signal abruptly emerges at a certain threshold magnetization value, giving rise to a prominently large anomalous Hall angle of $\left|Θ_{\mathrm{AHE}}\right| \sim 20^{\circ}$. When the magnetic field is applied along the inter-layer direction, which breaks the mirror symmetry, the system shows a pronounced negative longitudinal magnetoresistance. On the basis of electronic structure calculations and symmetry considerations, these anomalous magneto-transport properties can be considered as manifestations of two distinct topological phases: topological nodal-line and Weyl semimetals, respectively. Notably, the nodal-line structure is composed of bands with the same spin character and spans a wide energy range around the Fermi level. These topological phases are stabilized via the exchange coupling between localized Eu-4$f$ moments and mobile carriers conducting through the phosphorus layers. Our findings provide a realistic solution for external manipulation of band topology, enriching the functional aspects of topological materials.

preprint2022arXiv

Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2

Two-dimensional magnetic materials have recently attracted great interest due to their unique functions as the electric field control of a magnetic phase and the anomalous spin Hall effect. For such remarkable functions, a spin-orbit coupling (SOC) serves as an essential ingredient. Here we report a giant positive magnetoresistance in a layered magnetic semiconductor AgCrSe2, which is a manifestation of the subtle combination of the SOC and Zeeman-type spin splitting. When the carrier concentration approaches the critical value of 2.5\times10^18 cm^-3, a sizable positive magnetoresistance of ~400 % emerges upon the application of magnetic fields normal to the conducting layers. Based on the magneto-Seebeck effect and the first-principles calculations, the unconventional magnetoresistance is ascribable to the enhancement of effective carrier mass in the SOC induced J = 3/2 state, which is tuned to the Fermi level through the Zeeman splitting enhanced by the p-d coupling. This study demonstrates a new aspect of the SOC-derived magnetotransport in two-dimensional magnetic semiconductors, paving the way to novel spintronic functions.