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Bogdan Faina

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4 publications

preprint2022arXiv

Effect of impurity scattering on percolation of bosonic islands and reentrant superconductivity in Fe implanted NbN thin films

A reentrant temperature dependence of the thermoresistivity ρxx(T)ρ_{\mathrm{xx}}(T) between an onset local superconducting ordering temperature TloconsetT_\mathrm{loc}^\mathrm{onset} and a global superconducting transition at T=TglooffsetT=T_\mathrm{glo}^\mathrm{offset} has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic properties of sputtered NbN layers with a nominal thickness of 100 nm are studied by means of low-TT/high-μ0Hμ_{0}H magnetotransport measurements. The doping of NbN is achieved viavia implantation of 35 keV Fe ions. In the as-grown NbN films, a local onset of superconductivity at Tloconset=15.72 KT_\mathrm{loc}^\mathrm{onset}=15.72\,\mathrm{K} is found, while the global superconducting ordering is achieved at Tglooffset=15.05 KT_\mathrm{glo}^\mathrm{offset}=15.05\,\mathrm{K}, with a normal state resistivity ρxx=22 μΩ⋅cmρ_{\mathrm{xx}}=22\,{μΩ}\cdot{\mathrm{cm}}. Moreover, upon Fe doping of NbN, ρxx=40 μΩ⋅cmρ_{\mathrm{xx}}=40\,{μΩ}\cdot{\mathrm{cm}} is estimated, while TloconsetT_\mathrm{loc}^\mathrm{onset} and TglooffsetT_\mathrm{glo}^\mathrm{offset} are measured to be 15.1 K and 13.5K, respectively. In Fe:NbN, the intrinsic granularity leads to the emergence of a bosonic insulator state and the normal-metal-to-superconductor transition is accompanied by six different electronic phases characterized by a NN-shaped TT dependence of ρxx(T)ρ_{\mathrm{xx}}(T). The bosonic insulator state in a ss-wave conventional superconductor doped with dilute paramagnetic impurities is predicted to represent a workbench for emergent phenomena, such as gapless superconductivity, triplet Cooper pairings and topological odd frequency superconductivity.

preprint2013arXiv

Manipulating Mn--Mgk_k cation complexes to control the charge- and spin-state of Mn in GaN

Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mnn+^{n+} charge and spin state in the range 3≤n≤53\le n\le 5 and 2≥S≥12\ge S\ge 1. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mgk_k, where the number of ligands kk is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.

preprint2011arXiv

Structural and paramagnetic properties of dilute Ga1-xMnxN

Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn3+^{3+} ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.

preprint2009arXiv

Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy

X-ray absorption fine-structure (XAFS) measurements supported by {\em ab initio} computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe and Si-co-doped films grown by metalorganic vapour phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites in GaN or precipitate in the form of εε-Fe3_3N nanocrystals, which are ferromagnetic and metallic according to the DFT results. Precipitation can be hampered by reducing the Fe content, or by increasing the growth rate or by co-doping with Si. The near-edge region of the XAFS spectra provides information on the Fe charge state and shows its partial reduction from Fe+3^{+3} to Fe+2^{+2} upon Si co-doping, in agreement with the Fe electronic configurations expected within various implementations of DFT.

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