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Akihito Sawa

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con

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preprint2014arXiv

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi(1-d)FeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.

preprint2014arXiv

Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in La$_{0.6}$Sr$_{0.4}$MnO$_3$ thin films studied by x-ray magnetic circular dichroism

Metallic transition-metal oxides undergo a metal-to-insulator transition (MIT) as the film thickness decreases across a ritical thickness of several monolayers (MLs), but its driving mechanism remains controversial. We have studied the thickness-dependent MIT of the ferromagnetic metal La$_{0.6}$Sr$_{0.4}$MnO$_3$ by x-ray absorption spectroscopy and x-ray magnetic circular dichroism. As the film thickness was decreased across the critical thickness of the MIT (6-8 ML), a gradual decrease of the ferromagnetic signals and a concomitant increase of paramagnetic signals were observed, while the Mn valence abruptly decreased towards Mn$^{3+}$. These observations suggest that the ferromagnetic phase gradually and most likely inhomogeneously turns into the paramagnetic phase and both phases abruptly become insulating at the critical thickness.

preprint2002arXiv

Anisotropic Optical Conductivity of Nd2-xCexCuO4 Thin Films

Opticcal conductivity spectra $σ_1(ω)$ of Nd2-xCexCuO4 thin films, measured by the reflectance-transmittance method (R-T method) which has been proposed to investigate far-infrared spectroscopy, are investigated based on the anisotropic pairing model. Precise measurements of the frequency-dependent conductivity enable us to examine quantitatively the nature of the superconducting gap through infrared properties in the electron-doped high-Tc superconductors. We show that the behavior of optical conductivity $σ_1$ is consistent with the anisotropic superconducting gap and is well explained by the formula for d-wave pairing in the low-energy regime of the far-infrared region. Our results suggest that the electron-doped cuprate superconductors Nd2-xCexCuO4 have nodes in the superconducting gap.