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Aiming Yan

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Why do Collapsed Carbon Nanotubes Twist?

We study the collapsing and subsequent spontaneous twisting of a carbon nanotube by in-situ transmission electron microscopy. A custom-sized nanotube is first created in the microscope by selectively extracting shells from a parent multi-wall tube. The few-wall, large-diameter daughter nanotube is driven to collapse via mechanical stimulation, after which the ribbon-like collapsed tube spontaneously twists along its long axis. In-situ diffraction experiments fully characterize the uncollapsed and collapsed tubes. From the experimental observations and associated theoretical analysis, the origin of the twisting is determined to be compressive strain due to charge imbalance.

preprint2015arXiv

Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5 degree) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement towards controllable and scalable MoS2 based electronic devices.