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Source author record

Ageeth A. Bol

Ageeth A. Bol appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scieess.ASphysics.app-ph

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Published work

6 published item(s)

preprint2025arXiv

Delayed 1T to 2H Phase Transition Upon Electrochemical Delithiation of LiMoS2

Molybdenum disulfide (MoS2) is a widely studied layered material for electronic, optical, and catalytic applications. It can host lithium ions between the van der Waals layers, which triggers a phase transition between the semiconducting 2H phase and metallic 1T phase. While lithium insertion triggers a phase transition to the 1T phase, the phase behavior upon electrochemical lithium removal is not resolved. In this work, we conduct single-flake electrochemical (de)lithiation of MoS2 using microelectrode arrays. Through both electrochemical voltage analysis and correlative Raman spectroscopy, we show that an electrochemically cycled and delithiated MoS2 flake initially remains in the 1T phase. However, over the course of several days, it transitions back into the thermodynamically stable 2H phase. This result resolves the phase transformation pathway upon delithiation and showcases the ability to electrochemically synthesize the metastable 1T-MoS2 phase.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Resist and Transfer Free Patterned CVD Graphene Growth on ALD Molybdenum Carbide Nano Layers

Multilayer graphene (MLG) films were grown by chemical vapour deposition (CVD) on molybdenum carbide ($MoC_{x}$) substrates. We fabricated the catalytic $MoC_{x}$ films by plasma enhanced atomic layer deposition (PEALD). The mechanism of graphene growth is studied and analysed for amorphous and crystalline $MoC_{x}$ films. In addition, the unique advantages of catalytic substrate PEALD are demonstrated in two approaches to graphene device fabrication. First, we present a complete bottom up, resist-free patterned graphene growth (GG) on pre-patterned $MoC_{x}$ PEALD performed at 50$^{\circ}C$. Selective CVD GG eliminates the need to pattern or transfer the graphene film to retain its pristine, as grown, qualities. Furthermore, we fabricated MLG directly on PEALD $MoC_{x}$ on 100 nm suspended SiN membrane. We characterise the MLG qualities using Raman spectroscopy, and analyse the samples by optical microscopy, scanning electron microscopy and X-ray diffraction measurements. The techniques of graphene device manufacturing demonstrated here pave the path for large scale production of graphene applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Structure and electronic transport in graphene wrinkles

Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes. Quantum transport calculations show that conductance through these collapsed wrinkle structures is limited mainly by a density-of-states bottleneck and by interlayer tunneling across the collapsed bilayer region. Also through systematic measurements across large numbers of devices with wide folded wrinkles, we find a distinct anisotropy in their electrical resistivity, consistent with our transport simulations. These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Infrared Spectroscopy of Wafer-Scale Graphene

We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with the universal optical conductivity (due to interband transitions), and the wavelength at which Pauli blocking occurs due to band filling. From these the graphene layer number, doping level, sheet resistivity, carrier mobility, and scattering rate can be inferred. The mid-IR absorption of epitaxial two-layer graphene shows a less pronounced peak at 0.37\pm0.02 eV compared to that in exfoliated bilayer graphene. In heavily chemically-doped single layer graphene, a record high transmission reduction due to free carriers approaching 40% at 250 \mum (40 cm-1) is measured in this atomically thin material, supporting the great potential of graphene in far-infrared and terahertz optoelectronics.

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preprint2010arXiv

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically-induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1000, and resulting in zero threshold current, negligible self-heating, and high carrier-to- photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower (ca. 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Large low-frequency resistance noise in chemical vapor deposited graphene

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

0 citations0 reviewsNo code linkedOpen access