Researcher profile

Ageeth A. Bol

Ageeth A. Bol contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2025arXiv

Delayed 1T to 2H Phase Transition Upon Electrochemical Delithiation of LiMoS2

Molybdenum disulfide (MoS2) is a widely studied layered material for electronic, optical, and catalytic applications. It can host lithium ions between the van der Waals layers, which triggers a phase transition between the semiconducting 2H phase and metallic 1T phase. While lithium insertion triggers a phase transition to the 1T phase, the phase behavior upon electrochemical lithium removal is not resolved. In this work, we conduct single-flake electrochemical (de)lithiation of MoS2 using microelectrode arrays. Through both electrochemical voltage analysis and correlative Raman spectroscopy, we show that an electrochemically cycled and delithiated MoS2 flake initially remains in the 1T phase. However, over the course of several days, it transitions back into the thermodynamically stable 2H phase. This result resolves the phase transformation pathway upon delithiation and showcases the ability to electrochemically synthesize the metastable 1T-MoS2 phase.

preprint2019arXiv

Resist and Transfer Free Patterned CVD Graphene Growth on ALD Molybdenum Carbide Nano Layers

Multilayer graphene (MLG) films were grown by chemical vapour deposition (CVD) on molybdenum carbide ($MoC_{x}$) substrates. We fabricated the catalytic $MoC_{x}$ films by plasma enhanced atomic layer deposition (PEALD). The mechanism of graphene growth is studied and analysed for amorphous and crystalline $MoC_{x}$ films. In addition, the unique advantages of catalytic substrate PEALD are demonstrated in two approaches to graphene device fabrication. First, we present a complete bottom up, resist-free patterned graphene growth (GG) on pre-patterned $MoC_{x}$ PEALD performed at 50$^{\circ}C$. Selective CVD GG eliminates the need to pattern or transfer the graphene film to retain its pristine, as grown, qualities. Furthermore, we fabricated MLG directly on PEALD $MoC_{x}$ on 100 nm suspended SiN membrane. We characterise the MLG qualities using Raman spectroscopy, and analyse the samples by optical microscopy, scanning electron microscopy and X-ray diffraction measurements. The techniques of graphene device manufacturing demonstrated here pave the path for large scale production of graphene applications.