Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique
There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature dependence. This behavior and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/STO interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.