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Achintya Bera

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Published work

7 published item(s)

preprint2022arXiv

Gas permeation through graphdiyne-based nanoporous membranes

Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membranes made from multilayer graphdiyne, a graphene-like crystal with a larger unit cell. Despite being nearly a hundred of nanometers thick, the membranes allow fast, Knudsen-type permeation of light gases such as helium and hydrogen whereas heavy noble gases like xenon exhibit strongly suppressed flows. Using isotope and cryogenic temperature measurements, the seemingly conflicting characteristics are explained by a high density of straight-through holes (direct porosity of ~0.1%), in which heavy atoms are adsorbed on the walls, partially blocking Knudsen flows. Our work offers important insights into intricate transport mechanisms playing a role at nanoscale.

preprint2022arXiv

Pressure-induced superconductivity in weak topological insulator BiSe

Quasi-two-dimensional layered BiSe, a natural super-lattice with Bi2Se3-Bi2-Bi2Se3 units, has recently been predicted to be a dual topological insulator, simultaneously weak topological insulator as well as topological crystalline insulator. Here using structural, transport, spectroscopic measurements and density functional theory calculations, we show that BiSe exhibits rich phase diagram with the emergence of superconductivity with Tc ~8K under pressure. Sequential structural transitions into SnSe-type energetically tangled orthorhombic and CsCl-type cubic structures having distinct superconducting properties are identified at 8 GPa and 13 GPa respectively. Our observation of weak-antilocalization in magneto-conductivity suggests that spin-orbit coupling (SOC) plays a significant role in retaining non-trivial band topology in the trigonal phase with possible realization of 2D topological superconductivity. Theoretical analysis reveals that SOC significantly enhances superconducting Tc of the high-pressure cubic phase through an increase in electron-phonon coupling strength. Simultaneous emergence of Dirac-like surface states suggests cubic BiSe as a suitable candidate for the 3D-topological superconductor.

preprint2016arXiv

Pressure-induced phase transition in Bi$_2$Se$_3$ at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi$_2$Se$_3$) using Raman spectroscopy at pressure upto 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P $\sim$ 2.4 GPa followed by structural transitions at $\sim$ 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P $\sim$ 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated $\mathbb{Z}_2$ invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

preprint2014arXiv

Insights into vibrational and electronic properties of MoS$_2$ using Raman, photoluminescence and transport studies

We review vibrational and electronic properties of single and a few layer MoS$_2$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing modes show significant dependence on the number of MoS$_2$ layers. Further, the electron doping of the MoS$_2$ single layer achieved using top-gating in a field effect transistor renormalizes the two optical modes A$_{1g}$ and E$^1_{2g}$ differently due to symmetry-dependent electron-phonon coupling. The issues related to carrier mobility, the Schottky barrier at the MoS$_2$-metal contact pads and the modifications of the dielectric environment are addressed. The direct optical transitions for single layer-MoS$_2$ involve two excitons at K-point in the Brillouin zone and their stability with temperature and pressure has been reviewed. Finally, the Fermi-level dependence of spectral shift for a quasiparticle, called trion, has been discussed.

preprint2013arXiv

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metallic state at the ETT, but do not capture the phonon anomalies which involve breakdown of adiabatic approximation due to strongly coupled dynamics of phonons and electrons. Treating this within a four-band model of topological insulators, we elucidate how nonadiabatic renormalization of phonons constitutes readily measurable bulk signatures of an ETT, which will facilitate efforts to develop topological insulators by modifying a band insulator.

preprint2011arXiv

Raman Evidence for Superconducting Gap and Spin-Phonon Coupling in Superconductor Ca(Fe0.95Co0.05)2As2

Inelastic light scattering studies on single crystal of electron-doped Ca(Fe0.95Co0.05)2As2 superconductor, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at TSM ~ 140 K and superconducting transition temperature Tc ~ 23 K, reveal evidence for superconductivity-induced phonon renormalization; in particular the phonon mode near 260 cm-1 shows hardening below Tc, signaling its coupling with the superconducting gap. All the three Raman active phonon modes show anomalous temperature dependence between room temperature and Tc i.e phonon frequency decreases with lowering temperature. Further, frequency of one of the modes shows a sudden change in temperature dependence at TSM. Using first-principles density functional theory-based calculations, we show that the low temperature phase (Tc < T < TSM) exhibits short-ranged stripe anti-ferromagnetic ordering, and estimate the spin-phonon couplings that are responsible for these phonon anomalies.

preprint2011arXiv

Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3

We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Grüneisen parameters are determined in both the α and β-phases.