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Koushik Pal

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Published work

11 published item(s)

preprint2022arXiv

Identification of High-Dielectric Constant Compounds from Statistical Design

The discovery of high-dielectric materials is crucial to increasing the efficiency of electronic devices and batteries. Here, we report three previously unexplored materials with very high dielectric constants (69 $<$ $ε$ $<$ 101) and large band gaps (2.9$<$ $E_{\text{g}}$(eV) $<$ 5.5) obtained by screening materials databases using statistical optimization algorithms aided by artificial neural networks (ANN). Two of these new dielectrics are mixed-anion compounds (Eu$_5$SiCl$_6$O$_4$ and HoClO), and are shown to be thermodynamically stable against common semiconductors via phase-diagram analysis. We also uncovered four other materials with relatively large dielectric constants (20$<$$ε$$<$40) and band gaps (2.3$<$$E_{\text{g}}$(eV)$<$2.7). While the ANN training data is obtained from Materials Project, the search-space consists of materials from Open Quantum Materials Database (OQMD) - demonstrating a successful implementation of cross-database materials design. Overall, we report dielectric properties of 17 materials calculated using ab-initio calculations, that were selected in our design workflow. The dielectric materials with high dielectric properties predicted in this work open up further experimental research opportunities.

preprint2019arXiv

Anomalous temperature dependence of optical and acoustic phonons in Bi$_2$Se$_3$ arising from stacking faults

The class of layered 3D-topological insulators have shown intriguingly anomalous temperature dependence in their thermal expansion coefficients. It was proposed that stacking faults are the origin of the observed anomalous thermal expansion. Here, using femtosecond pump-probe differential reflectivity measurements we probe the carrier and coherently generated totally symmetric A1g1 optical phonons in Bi2Se3. Transient signals also show a low frequency (~GHz) oscillations due to coherent longitudinal acoustic phonons. We extract temperature dependence of optical constants, sound velocity and Young's modulus of Bi2Se3 using the strain pulse propagation model. A remarkable anomalous behavior around ~180 K is observed in the temperature dependence of optical and acoustic phonons as well as the optical constants. First-principles density functional theory (DFT) reveals that thermally activated formation of stacking faults is responsible for the anomalies observed in Bi2Se3, similar to case of Sb2Te3. We also show that inclusion of spin-orbit coupling plays an important role in reducing the total energy difference between the pristine and the faulted structures.

preprint2016arXiv

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

The discovery of strong topological insulators led to enormous activity in condensed matter physics and the discovery of new types of topological materials. Bisumth based chalcogenides are exemplary strong three dimensional topological insulators that host an odd number of massless Dirac fermionic states on all surfaces. A departure from this notion is the idea of a weak topological insulator, wherein only certain surface terminations host surface states characterized by an even number of Dirac cones leading to exciting new physics. Experimentally however, weak topological insulators have proven to be elusive. Here, we report a discovery of a weak topological insulator (WTI), BiSe, of the Bi-chalcogenide family with an indirect band gap of 42 meV. Its structural unit consists of bismuth bilayer (Bi$_2$), a known quantum spin hall insulator sandwiched between two units of Bi$_2$Se$_3$ which are three dimensional strong topological insulators. Angle resolved photo-emission spectroscopy (ARPES) measurements on cleaved single crystal flakes along with density fucntional theory (DFT) calculations confirm the existence of weak topological insulating state of BiSe. Additionally, we have carried out magneto-transport measurements on single crystal flakes as well as thin films of BiSe, which exhibit clear signatures of weak anti-localization at low temperatures, consistent with the properties of topological insulators.

preprint2016arXiv

Pressure-induced phase transition in Bi$_2$Se$_3$ at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi$_2$Se$_3$) using Raman spectroscopy at pressure upto 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P $\sim$ 2.4 GPa followed by structural transitions at $\sim$ 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P $\sim$ 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated $\mathbb{Z}_2$ invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

preprint2015arXiv

Partial metric spaces with negative distances and fixed point theorems

In this paper we consider partial metric spaces in the sense of O'Neill. We introduce the notions of strong partial metric spaces and Cauchy functions. We prove a fixed point theorem for such spaces and functions that improves Matthews' contraction mapping theorem in two ways. First, the existence of fixed points now holds for a wider class of functions and spaces. Second, our theorem also allows for fixed points with nonzero self-distances. We also prove fixed point theorems for orbitally $r$-contractive and orbitally $ϕ_r$-contractive maps. We then apply our results to give alternative proofs of some of the other known fixed point theorems in the context of partial metric spaces.

preprint2015arXiv

Partial n-metric spaces and fixed point theorems

In this paper we combine the notions of partial metric spaces with negative distances, $G_p$-metric spaces and n-metric spaces together into one structure called the partial n-metric spaces. These are generalizations of all the said structures, and also generalize the notions of $G$-metric and $G_p$-metric spaces to arbitrary finite dimension. We prove Cauchy mapping theorems and other fixed point theorems for such spaces.

preprint2015arXiv

The model theory of separably tame valued fields

A henselian valued field $K$ is called separably tame if its separable-algebraic closure $K^{\operatorname{sep}}$ is a tame extension, that is, the ramification field of the normal extension $K^{\operatorname{sep}}|K$ is separable-algebraically closed. Every separable-algebraically maximal Kaplansky field is a separably tame field, but not conversely. In this paper, we prove Ax-Kochen-Ershov Principles for separably tame fields. This leads to model completeness and completeness results relative to the value group and residue field. As the maximal immediate extensions of separably tame fields are in general not unique, the proofs have to use much deeper valuation theoretical results than those for other classes of valued fields which have already been shown to satisfy Ax-Kochen-Ershov Principles. Our approach also yields alternate proofs of known results for separably closed valued fields.

preprint2014arXiv

Strain induced $\mathbb{Z}_2$ topological insulating state of $β$-As$_2$Te$_3$

Topological insulators are non-trivial quantum states of matter which exhibit a gap in the electronic structure of their bulk form, but a gapless metallic electronic spectrum at the surface. Here, we predict a uniaxial strain induced electronic topological transition (ETT) from a band to topological insulating state in the rhombohedral phase (space group: R$\bar{3}$m) of As$_2$Te$_3$ ($β$-As$_2$Te$_3$) through \textit{first-principles} calculations including spin-orbit coupling within density functional theory. The ETT in $β$-As$_2$Te$_3$ is shown to occur at the uniaxial strain $ε_{zz}$ = -0.05 ($σ_{zz}$=1.77 GPa), passing through a Weyl metallic state with a single Dirac cone in its electronic structure at the $Γ$ point. We demonstrate the ETT through band inversion and reversal of parity of the top of the valence and bottom of the conduction bands leading to change in the $\mathbb{Z}_2$ topological invariant $ν_0$ from 0 to 1 across the transition. Based on its electronic structure and phonon dispersion, we propose ultra-thin films of As$_2$Te$_3$ to be promising for use in ultra-thin stress sensors, charge pumps and thermoelectrics.

preprint2013arXiv

Model companion of ordered theories with an automorphism

Kikyo and Shelah showed that if $T$ is a theory with the Strict Order Property in some first-order language $\mathcal{L}$, then in the expanded language $\mathcal{L}_σ:= \mathcal{L}\cup\{σ\}$ with a new unary function symbol $σ$, the bigger theory $T_σ:= T\cup\{``σ\mbox{is an} \mathcal{L}\mbox{-automorphism''}\}$ does not have a model companion. We show in this paper that if, however, we restrict the automorphism and consider the theory $T_σ$ as the base theory $T$ together with a ``restricted'' class of automorphisms, then $T_σ$ can have a model companion in $\mathcal{L}_σ$. We show this in the context of linear orders and ordered abelian groups.

preprint2013arXiv

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metallic state at the ETT, but do not capture the phonon anomalies which involve breakdown of adiabatic approximation due to strongly coupled dynamics of phonons and electrons. Treating this within a four-band model of topological insulators, we elucidate how nonadiabatic renormalization of phonons constitutes readily measurable bulk signatures of an ETT, which will facilitate efforts to develop topological insulators by modifying a band insulator.

preprint2010arXiv

Multiplicative Valued Difference Fields

The theory of valued difference fields $(K, σ, v)$ depends on how the valuation $v$ interacts with the automorphism $σ$. Two special cases have already been worked out - the isometric case, where $v(σ(x)) = v(x)$ for all $x\in K$, has been worked out by Luc Belair, Angus Macintyre and Thomas Scanlon; and the contractive case, where $v(σ(x)) > n\cdot v(x)$ for all $n\in\mathbb{N}$ and $x\in K^\times$ with $v(x) > 0$, has been worked out by Salih Azgin. In this paper we deal with a more general version, called the multiplicative case, where $v(σ(x)) = ρ\cdot v(x)$, where $ρ(> 0)$ is interpreted as an element of a real-closed field. We give an axiomatization and prove a relative quantifier elimination theorem for such a theory.