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Researcher profile

Abinash Kumar

Abinash Kumar contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallMachine Learningphysics.app-phphysics.comp-phphysics.ins-det

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Published work

4 published item(s)

preprint2022arXiv

Correlating Local Chemical and Structural Order Using Geographic Information Systems-Based Spatial Statistics

Analysis of nanoscale short-range chemical and/or structural order via (scanning) transmission electron microscopy (S/TEM) imaging is fundamentally limited by projection of the three dimensional sample, which averages informational along the beam direction. Extracting statistically significant spatial correlations between the structure and chemistry determined from these two-dimensional datasets thus remains challenging. Here, we apply methods commonly used in Geographic Information Systems (GIS) to determine the spatial correlation between measures of local chemistry and structure from atomic-resolution STEM imaging of a compositionally complex relaxor, Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ (PMN). The approach is used to determine the type of ordering present and to quantify the spatial variation of chemical order, oxygen octahedral distortions, and oxygen octahedral tilts. The extent of autocorrelation and inter-feature correlation among these short-range ordered regions are then evaluated through a spatial covariance analysis, showing correlation as a function of distance. The results demonstrate that integrating GIS tools for analyzing microscopy datasets can serve to unravel subtle relationships among chemical and structural features in complex materials that can be hidden when ignoring their spatial distributions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct Imaging and Electronic Structure Modulation of Moiré Superlattices at the 2D/3D Interface

The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 A moiré pattern at the 2D/3D interface. This moiré period is often hidden in conventional electron microscopy, where the Au structure is seen in projection. We show, via ab initio electronic structure calculations, that charge density is modulated according to the moiré period, illustrating the potential for (opto-)electronic moiré engineering at the 2D/3D interface. Our work presents a general pathway to directly image periodic modulation at interfaces using this combination of emerging microscopy techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Towards Augmented Microscopy with Reinforcement Learning-Enhanced Workflows

Here, we report a case study implementation of reinforcement learning (RL) to automate operations in the scanning transmission electron microscopy (STEM) workflow. To do so, we design a virtual, prototypical RL environment to test and develop a network to autonomously align the electron beam without prior knowledge. Using this simulator, we evaluate the impact of environment design and algorithm hyperparameters on alignment accuracy and learning convergence, showing robust convergence across a wide hyperparameter space. Additionally, we deploy a successful model on the microscope to validate the approach and demonstrate the value of designing appropriate virtual environments. Consistent with simulated results, the on-microscope RL model achieves convergence to the goal alignment after minimal training. Overall, the results highlight that by taking advantage of RL, microscope operations can be automated without the need for extensive algorithm design, taking another step towards augmenting electron microscopy with machine learning methods.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Defect Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect level switching (DLS). This new electronic device design principle - photoconductivity without photons - leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of new nonlinear, hysteretic devices for future electronics.

0 citations0 reviewsNo code linkedOpen access