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Researcher profile

Abin Varghese

Abin Varghese contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2021arXiv

Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures

The application of ultrathin two-dimensional (2D) perovskites in near-infrared and visible-range optoelectronics has been limited owing to their inherent wide bandgaps, large excitonic binding energies and low optical absorption at higher wavelengths. Here, we show that by tailoring interfacial band alignments via conjugation with low-dimensional materials like monolayer transition metal dichalcogenides (TMD), the functionalities of 2D perovskites can be extended to diverse, visible-range photophysical applications. Based on the choice of individual constituents in the 2D perovskite/TMD heterostructures, our first principles calculations demonstrate widely tunable type-II band gaps, carrier effective masses and band offsets to enable an effective separation of photogenerated excitons for enhanced photodetection and photovoltaic applications. In addition, we show the possibilities of achieving a type-I band alignment for recombination based light emitters as well as a type-III configuration for tunnelling devices. Further, we evaluate the effect of strain on the electronic properties of the heterostructures to show a significant strain tolerance, making them prospective candidates in flexible photosensors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS$_2$ Heterostructure

Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi-level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a key requirement for these applications. This report demonstrates visible-to-near infrared wavelength-driven NPC and PPC, along with reversible switching between the two, in an air stable, high mobility, broadband black phosphorus (BP) field effect transistor (FET) covered with a few layer MoS$_2$ flake. The crossover switching wavelength can be tuned by varying the MoS$_2$ bandgap through its flake thickness and the NPC and PPC photoresponsivities can be modulated using electrostatic gating as well as laser power. Recombination-driven NPC and PPC allows for reversible switching at reasonable time scales of a few seconds. Further, gate voltage-dependent negative persistent photoconductance enables synaptic behavior that is well-suited for optosynaptic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS$_2$ FETs

Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS$_2$ channels holds significant promise for non-volatile memory applications. However such crossovers have been shown to manifest only at high temperature. In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS$_2$ FETs by using a gate-drain underlap design to induce a differential response from traps at the MoS$_2$-HfO$_2$ channel-gate dielectric interface to applied gate bias. The appearance of interface trap-driven anti-clockwise hysteresis at high gate voltages in underlap FETs can be unambiguously attributed to the presence of an underlap since transistors with and without the underlap region were fabricated on the same MoS$_2$ channel flake. The underlap design also enables room temperature tuning of the anti-clockwise hysteresis window (by 140$\times$) as well as the crossover gate voltage (by 2.6$\times$) with applied drain bias and underlap length. Comprehensive measurements of the transfer curves in ambient and vacuum conditions at varying sweep rates and temperatures (RT, 45 $^\circ$C and 65 $^\circ$C) help segregate the quantitative contributions of adsorbates, interface traps, and bulk HfO$_2$ traps to the clockwise and anti-clockwise hysteresis.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $μ$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $μ$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access