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Dipankar Saha

Dipankar Saha appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciHardware Architecturequant-phBiological PhysicsBiomoleculesOther Computer Sciencephysics.app-ph

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Published work

9 published item(s)

preprint2020arXiv

Exotic compositional ordering in Mn-Ni-As intermetallics

Recent advances in tools for crystal structure analysis enabled us to describe a new phenomenon in structural chemistry, which, to this day, has remained hidden. Here we describe a crystal structure with an incommensurate compositional modulation, Mn0.6Ni0.4As. The sample adopts the NiAs type structure, but in contrast to a normal solid solution, we observe that manganese and nickel separate into layers of MnAs and NiAs with thickness of 2-4 face-shared octahedra. Experimentally, results are obtained by combination of 3D electron diffraction, scanning transmission electron microscopy and neutron diffraction. The distribution of octahedral units between the manganese and nickel layers is perfectly described by a modulation vector q = 0.360(3) c*. An additional periodicity is thus present in the compound. Positional modulation is observed of all elements as a consequence of the occupational modulation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $μ$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $μ$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Fringe field control of one-dimensional room temperature quantum transport in site controlled AlGaN/GaN lateral nanowires

We have demonstrated effective fringe field control of one-dimensional electron gas (1-DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a combination of dry and anisotropic wet etching. The nanowire dimensions are well controlled and can have a very high length/width aspect ratio of 10 um/5 nm or larger. The transport is controlled by a fringe gate and shows room temperature quantum transport where gradual filling of 1-D subbands gets manifested as oscillations in the transconductance. The fringe gate threshold voltage for depletion of one-dimensional electron gas is found to increase with increasing drain voltage indicating efficient control of 1-DEG. The transport characteristics and fringe field operation are explained by taking into account quantum capacitance in addition to the conventional geometric capacitance. The effect of nanowire width and fringe gate position is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires

We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally formed during the wet etching. The dimension variation is controlled through etching times wherein the underlying cause is the merging of the nearby crystallographic hexagonal etch pits. The emission processes involving excitons are found to be efficient and lead to enhanced emission characteristics. The exciton binding energy is augmented by using quantum confinement whereby enforcing greater overlap of the electron-hole wave-function. The surviving nanowires are nearly defect-free, have large exciton binding energies of around 45 meV and a small temperature variation of the output electroluminescent light. We have observed superluminescent behaviour of the LEDs formed on these nanowires. There is no observable efficiency roll off till current densities of 400 A/cm2. The present work thus provides an innovative and cost effective manner of device fabrication on the formed nanowires and proves the immediate performance enhancement achievable.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

State Transitions and Decoherence in the Avian Compass

The radical pair model has been successful in explaining behavioral characteristics of the geomagnetic compass believed to underlie the navigation capability of certain avian species. In this study, the spin dynamics of the radical pair model and decoherence therein are interpreted from a microscopic state transition point of view. This helps to elucidate the interplay between the hyperfine and Zeeman interactions that enables the avian compass, and the distinctive effects of nuclear and environmental decoherence on it. Using a quantum information theoretic quantifier of coherence, we find that nuclear decoherence induces new structure in the spin dynamics without materially affecting the compass action; environmental decoherence, on the other hand, completely disrupts it.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of line defects on the electrical transport properties of monolayer MoS$_{2}$ sheet

We present a computational study on the impact of line defects on the electronic properties of monolayer MoS2. Four different kinds of line defects with Mo and S as the bridging atoms, consistent with recent theoretical and experimental observations are considered herein. We employ the density functional tight-binding (DFTB) method with a Slater-Koster type DFTB-CP2K basis set for evaluating the material properties of perfect and the various defective MoS2 sheets. The transmission spectra is computed with a DFTB-Non-Equilibrium Greens Function (NEGF) formalism. We also perform a detailed analysis of the carrier transmission pathways under a small bias and investigate the phase shifts in the transmission eigenstates of the defective MoS2 sheets. Our simulations show a 2-4 folds decrease in carrier conductance of MoS2 sheets in the presence of line defects as compared to that for the perfect sheet.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Row-Based Dual Vdd Assignment, for a Level Converter Free CSA Design and Its Near-Threshold Operation

Subthreshold circuit designs are very much popular for some of the ultra low power applications, where the minimum energy consumption is the primary concern. But, due to the weak driving current, these circuits generally suffer from huge performance degradation. Therefore, in this paper, we primarily targeted to analyze the performance of a Near-Threshold Circuit (NTC), which retains the excellent energy efficiency of the subthreshold design, while improving the performance to a certain extent. A modified row-based dual Vdd 4-operand CSA (Carry Save Adder) design has been reported in the present work using 45 nm technology. Moreover, to find out the effectiveness of the near-threshold operation of the 4-operand CSA design; it has been compared with the other design styles. From the simulation results, obtained for the frequency of 20 MHz, we found that the proposed scheme of CSA design consumes 3.009*10-7 Watt of Average Power (Pavg), which is almost 90.9 % lesser than that of the conventional CSA design. Whereas, looking at the perspective of maximum delay at output, the proposed scheme of CSA design provides a fair 44.37 % improvement, compared to that of the subthreshold CSA design.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A Low-Voltage, Low-Power 4-bit BCD Adder, designed using the Clock Gated Power Gating, and the DVT Scheme

This paper proposes a Low-Power, Energy Efficient 4-bit Binary Coded Decimal (BCD) adder design where the conventional 4-bit BCD adder has been modified with the Clock Gated Power Gating Technique. Moreover, the concept of DVT (Dual-vth) scheme has been introduced while designing the full adder blocks to reduce the Leakage Power, as well as, to maintain the overall performance of the entire circuit. The reported architecture of 4-bit BCD adder is designed using 45 nm technology and it consumes 1.384 μWatt of Average Power while operating with a frequency of 200 MHz, and a Supply Voltage (Vdd) of 1 Volt. The results obtained from different simulation runs on SPICE, indicate the superiority of the proposed design compared to the conventional 4-bit BCD adder. Considering the product of Average Power and Delay, for the operating frequency of 200 MHz, a fair 47.41 % reduction compared to the conventional design has been achieved with this proposed scheme.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Implementation of the Cluster Based Tunable Sleep Transistor Cell Power Gating Technique for a 4x4 Multiplier Circuit

A modular, programmable, and high performance Power Gating strategy, called cluster based tunable sleep transistor cell Power Gating, has been introduced in the present paper with a few modifications. Furthermore, a detailed comparison of its performance with some of the other conventional Power Gating schemes; such as Cluster Based Sleep Transistor Design (CBSTD), Distributed Sleep Transistor Network (DSTN) etc.; has also been presented here. Considering the constraints of power consumption, performance, and the area overhead, while doing the actual implementation of any Power Gating scheme, it becomes important to deal with the various design issues like the proper sizing of the sleep transistors (STs), controlling the voltage drop (IR drop) across the STs, and obviously maintaining a desired performance with lower amount of delay degradation. With this notion, we tried to find out an efficient Power Gating strategy which can reduce the overall power consumption of any CMOS circuit by virtue of reducing the standby mode leakage current. Taking the different performance parameters into account, for an example circuit, which is actually the conventional 4x4 multiplier design, we found that the modified tunable sleep transistor cell Power Gating gives very much promising results. The reported architecture of the 4x4 multiplier with the tunable sleep transistor cell Power Gating, is designed using 45 nm technology and it consumes 1.3638x10-5 Watt of Average Power while being operated with the nominal case of the bit configuration word, that is, 1000. ...........

0 citations0 reviewsNo code linkedOpen access