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Researcher profile

Dipankar Saha

Dipankar Saha contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciOther Computer Sciencephysics.app-ph

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Published work

3 published item(s)

preprint2020arXiv

Exotic compositional ordering in Mn-Ni-As intermetallics

Recent advances in tools for crystal structure analysis enabled us to describe a new phenomenon in structural chemistry, which, to this day, has remained hidden. Here we describe a crystal structure with an incommensurate compositional modulation, Mn0.6Ni0.4As. The sample adopts the NiAs type structure, but in contrast to a normal solid solution, we observe that manganese and nickel separate into layers of MnAs and NiAs with thickness of 2-4 face-shared octahedra. Experimentally, results are obtained by combination of 3D electron diffraction, scanning transmission electron microscopy and neutron diffraction. The distribution of octahedral units between the manganese and nickel layers is perfectly described by a modulation vector q = 0.360(3) c*. An additional periodicity is thus present in the compound. Positional modulation is observed of all elements as a consequence of the occupational modulation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $μ$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $μ$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Implementation of the Cluster Based Tunable Sleep Transistor Cell Power Gating Technique for a 4x4 Multiplier Circuit

A modular, programmable, and high performance Power Gating strategy, called cluster based tunable sleep transistor cell Power Gating, has been introduced in the present paper with a few modifications. Furthermore, a detailed comparison of its performance with some of the other conventional Power Gating schemes; such as Cluster Based Sleep Transistor Design (CBSTD), Distributed Sleep Transistor Network (DSTN) etc.; has also been presented here. Considering the constraints of power consumption, performance, and the area overhead, while doing the actual implementation of any Power Gating scheme, it becomes important to deal with the various design issues like the proper sizing of the sleep transistors (STs), controlling the voltage drop (IR drop) across the STs, and obviously maintaining a desired performance with lower amount of delay degradation. With this notion, we tried to find out an efficient Power Gating strategy which can reduce the overall power consumption of any CMOS circuit by virtue of reducing the standby mode leakage current. Taking the different performance parameters into account, for an example circuit, which is actually the conventional 4x4 multiplier design, we found that the modified tunable sleep transistor cell Power Gating gives very much promising results. The reported architecture of the 4x4 multiplier with the tunable sleep transistor cell Power Gating, is designed using 45 nm technology and it consumes 1.3638x10-5 Watt of Average Power while being operated with the nominal case of the bit configuration word, that is, 1000. ...........

0 citations0 reviewsNo code linkedOpen access