Researcher profile

A. V. Poshakinskiy

A. V. Poshakinskiy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
6works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2024arXiv

Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field

Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear polarization (DNP) are performed at cryogenic temperatures and/or in moderate external magnetic fields, the latter approach being very sensitive to the magnetic field orientation. Here, we demonstrate that the $^{29}$Si nuclear spins in SiC can be efficiently polarized at room temperature even in the Earth's magnetic field. We exploit the asymmetric splitting of the optically detected magnetic resonance (ODMR) lines inherent to half-integer $S = 3/2$ electron spins, such that the certain transitions involving $^{29}$Si nuclei can be clearly separated and selectively addressed using radiofrequency (RF) fields. As a model system, we use the V3 silicon vacancy in 6H-SiC, which has the zero-filed splitting parameter comparable with the hyperfine interaction constant. Our theoretical model considers DNP under optical excitation in combination with RF driving and agrees very well with the experimental data. In the case of high-fidelity electron spin polarization, the proposed DNP protocol leads to ultra-deep optical cooling of nuclear spins with an effective temperature of about 50 nK. These results provide a straightforward approach for controlling the nuclear spin under ambient conditions, representing an important step toward realizing nuclear hyperpolarization for magnetic resonance imaging and long nuclear spin memory for quantum logic gates.

preprint2022arXiv

Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime

To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs semiconductors hosting two-dimensional electron gases. It is shown that for the establishment of the longest spin-lifetime, the variation of scattering rate with the electron density is of higher importance than the fulfilling of the persistent spin helix condition when the Rashba $α$ and Dresselhaus $β$ parameters are balanced. More specifically, regardless of the $α$ and $β$ linear dependencies on the electron density, the spin relaxation rate is determined by the spin diffusion coefficient that depends on electron density nonmonotonously. The longest experimental spin-lifetime occurs at an electron density, corresponding to the transition from Boltzmann to Fermi-Dirac statistics, which is several times higher than that when the persistent spin helix is expected. These facts highlight the role the electron density may play when considering applications for spintronic devices.

preprint2021arXiv

Acoustically induced coherent spin trapping

Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices.

preprint2020arXiv

Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature

We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.

preprint2020arXiv

Stress-controlled zero-field spin splitting in silicon carbide

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.

preprint2019arXiv

Spin noise at electron paramagnetic resonance

We develop a microscopic theory of spin noise in solid-state systems at electron paramagnetic resonance, when the spin dynamics is driven by static and radio-frequency (RF) magnetic fields and the stochastic effective magnetic field stemming from the interaction with environment. The RF field splits the peaks in the power spectrum of spin noise into the Mollow-like triplets and also gives rise to additional spin-spin correlations which oscillate in the absolute time at the RF frequency and the double frequeqncy. Even in systems with strong inhomogeneous broadening, the spin noise spectrum contains narrow lines insensitive to the dispersion of the effective $g$-factors. Thus, the measurements of spin noise at electron paramagnetic resonance provides an access to the intrinsic spin lifetime of electrons.