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Researcher profile

A. N. Anisimov

A. N. Anisimov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciquant-ph

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Published work

4 published item(s)

preprint2025arXiv

Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies

We report the experimental realization and optical characterization of chlorine-vacancy (ClV) color centers in 4H-SiC emitting in the fiber-optic telecom bands. These defects are created via chlorine ion implantation followed by high-temperature annealing. Photoluminescence spectroscopy reveals four distinct ClV configurations with zero-phonon lines (ZPLs) located in the O-band (1260 - 1360 nm), S-band (1460 - 1530 nm) and C-band (1530 - 1565 nm). Controlled implantation and annealing experiments confirm that the ClV centers originate specifically from chlorine incorporation into SiC and are not intrinsic to this material. We optimize the creation conditions for ClV ensembles and demonstrate negligible reduction of the ZPL intensity up to a temperature of 30 K. These results establish ClV defects as a new class of telecom-band color centers in a CMOS-compatible platform, offering strong potential for scalable quantum networks.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field

Coupled electron-nuclear spins represent a promising quantum system, where the optically induced electron spin polarization can be dynamically transferred to nuclear spins via the hyperfine interaction. Most experiments on dynamic nuclear polarization (DNP) are performed at cryogenic temperatures and/or in moderate external magnetic fields, the latter approach being very sensitive to the magnetic field orientation. Here, we demonstrate that the $^{29}$Si nuclear spins in SiC can be efficiently polarized at room temperature even in the Earth's magnetic field. We exploit the asymmetric splitting of the optically detected magnetic resonance (ODMR) lines inherent to half-integer $S = 3/2$ electron spins, such that the certain transitions involving $^{29}$Si nuclei can be clearly separated and selectively addressed using radiofrequency (RF) fields. As a model system, we use the V3 silicon vacancy in 6H-SiC, which has the zero-filed splitting parameter comparable with the hyperfine interaction constant. Our theoretical model considers DNP under optical excitation in combination with RF driving and agrees very well with the experimental data. In the case of high-fidelity electron spin polarization, the proposed DNP protocol leads to ultra-deep optical cooling of nuclear spins with an effective temperature of about 50 nK. These results provide a straightforward approach for controlling the nuclear spin under ambient conditions, representing an important step toward realizing nuclear hyperpolarization for magnetic resonance imaging and long nuclear spin memory for quantum logic gates.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stress-controlled zero-field spin splitting in silicon carbide

We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation.

0 citations0 reviewsNo code linkedOpen access