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A. V. Fedorov

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.supr-con cond-mat.mes-hall cond-mat.quant-gas hep-ph nucl-ex nucl-th physics.ins-det

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preprint2020arXiv

The nature of ferromagnetism in the chiral helimagnet $Cr_{1/3}NbS_{2}$

The chiral helimagnet, $Cr_{1/3}NbS_{2}$ , hosts exotic spin textures, whose influence on the magneto-transport properties, make this material an ideal candidate for future spintronic applications. To date, the interplay between macroscopic magnetic and transport degrees of freedom is believed to result from a reduction in carrier scattering following spin order. Here, we present electronic structure measurements through the helimagnetic transition temperature, $T_{C}$ that challenges this view by showing a Fermi surface comprised of strongly hybridized Nb- and Cr- derived electronic states, and spectral weight in proximity to the Fermi level to anomalously increases as temperature is lowered below $T_{C}$ . These findings are rationalized on the basis of first principle, density functional theory calculations, which reveal a large nearest-neighbor exchange energy, suggesting the interaction between local spin moments and hybridized Nb- and Cr- derived itinerant states to go beyond the perturbative interaction of Ruderman-Kittel-Kasuya-Yosida, suggesting instead a mechanism rooted in a Hund's exchange interaction.

preprint2019arXiv

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX $_2$ (X = Se and Te)

Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe $_2$ . ARPES studies on ZrTe $_2$ demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe $_2$ to a semimetal. The DFT calculations further suggest a band inversion between Te $p$ and Zr $d$ states at the $Γ$ point, hinting at the non-trivial band topology in ZrTe $_2$ . Thus, our studies for the first time unambiguously demonstrate that ZrTe $_2$ is a topological semimetal. Also, a comparative band structure study is done on ZrSe $_2$ which shows a semiconducting nature of the electronic structure with an indirect band gap of 0.9 eV between $Γ(A)$ and $M (L)$ high symmetry points. In the below we show that the metal-chalcogen bond-length plays a critical role in the electronic phase transition from semiconductor to a topological semimetal ingoing from ZrSe $_2$ to ZrTe $_2$ .

preprint2016arXiv

Disentangling the surface and bulk electronic structures of LaOFeAs

We performed a comprehensive angle-resolved photoemission spectroscopy study of the electronic band structure of LaOFeAs single crystals. We found that samples cleaved at low temperature show an unstable and highly complicated band structure, whereas samples cleaved at high temperature exhibit a stable and clearer electronic structure. Using \emph{in-situ} surface doping with K and supported by first-principles calculations, we identify both surface and bulk bands. Our assignments are confirmed by the difference in the temperature dependence of the bulk and surface states.

preprint2016arXiv

Magnetic effects in sulfur-decorated graphene

The interaction between two different materials can present novel phenomena that are quite different from the physical properties observed when each material stands alone. Strong electronic correlations, such as magnetism and superconductivity, can be produced as the result of enhanced Coulomb interactions between electrons. Two-dimensional materials are powerful candidates to search for the novel phenomena because of the easiness of arranging them and modifying their properties accordingly. In this work, we report magnetic effects of graphene, a prototypical non-magnetic two-dimensional semi-metal, in the proximity with sulfur, a diamagnetic insulator. In contrast to the well-defined metallic behaviour of clean graphene, an energy gap develops at the Fermi energy for the graphene/sulfur compound with decreasing temperature. This is accompanied by a steep increase of the resistance, a sign change of the slope in the magneto-resistance between high and low fields, and magnetic hysteresis. A possible origin of the observed electronic and magnetic responses is discussed in terms of the onset of low-temperature magnetic ordering. These results provide intriguing insights on the search for novel quantum phases in graphene-based compounds.

preprint2015arXiv

Gapped Surface States in a Strong-Topological-Semimetal

A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror-invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi $_4$ Se $_3$ . Angle-resolved photoemission spectroscopy and \textit{ab initio} calculations reveal partial gapping of surface bands on the Bi $_2$ Se $_3$ -termination of Bi $_4$ Se $_3$ (111), where an 85 meV gap along $\barΓ\bar{K}$ closes to zero toward the mirror-invariant $\barΓ\bar{M}$ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin-helicity.

preprint2015arXiv

Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties

A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world.

preprint2015arXiv

Topological nature of FeSe $_{0.5}$ Te $_{0.5}$ superconductor

We demonstrate, using first-principles calculations, that the electronic structure of FeSe $_{1-x}$ Te $_{x}$ ( $x$ =0.5) is topologically non-trivial, characterized by an odd $\mathbb Z_2$ invariant and Dirac cone type surface states, in sharp contrast to the end member FeSe ( $x$ =0). This topological state is induced by the enhanced three-dimensionality and spin-orbit coupling due to Te substitution (compared to FeSe), characterized by a band inversion at the $Z$ point of the Brillouin zone, which is confirmed by our ARPES measurements. The results suggest that the surface of FeSe $_{0.5}$ Te $_{0.5}$ may support a non-trivial superconducting channel in proximity to the bulk.

preprint2014arXiv

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 x 1014 cm-3. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (EF) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, that the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near EF. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

preprint2014arXiv

Hyperfine field assessment of the magnetic structure of ZrZn2

Time differential perturbed angular gamma-gamma-correlation (TDPAC) method on 111Cd nuclei probes inserted in ZrZn1.9 is used to measure the magnetic hyperfine fields (MHF) at Zr and Zn sites and the electric field gradient (EFG) Vzz at Zn sites as a function of temperature at various pressures and as a function of pressure at the temperature 4 K. Our data indicate that the local magnetic moment of Zr in the magnetically ordered state is substantially larger than its value obtained from the macroscopic measurements and that there is also an induced magnetic moment at the Zn site. We conclude that ZrZn2 is not a simple ferromagnet and discuss a possible type of its magnetic ordering.

preprint2014arXiv

Observation of an electron band above the Fermi level in FeTe $_{0.55}$ Se $_{0.45}$ from \emph{in-situ} surface doping

We used \emph{in-situ} potassium (K) evaporation to dope the surface of the iron-based superconductor FeTe $_{0.55}$ Se $_{0.45}$ . The systematic study of the bands near the Fermi level confirms that electrons are doped into the system, allowing us to tune the Fermi level of this material and to access otherwise unoccupied electronic states. In particular, we observe an electron band located above the Fermi level before doping that shares similarities with a small three-dimensional pocket observed in the cousin, heavily-electron-doped KFe $_{2-x}$ Se $_2$ compound.

preprint2014arXiv

Observation of the chiral magnetic effect in ZrTe5

The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin $1/2$ particles with a definite projection of spin on momentum) -- a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe_5. Our angle-resolved photoemission spectroscopy experiments show that this material's electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background.

preprint2014arXiv

Photoluminescence of a quantum-dot molecule

We formulate a theory of low-temperature, stationary photoluminescence from a quantum-dot molecule composed of two spherical quantum dots whose electronic subsystems are resonantly coupled via the Coulomb interaction. We show that the coupling leads to the hybridization of the first excited states of the quantum dots, manifesting itself as a pair of photoluminescence peaks with intensities and spectral positions strongly dependent on the geometric, material, and relaxation parameters of the quantum-dot molecule. These parameters are explicitly contained in the analytical expression for the photoluminescence differential cross section derived in the paper. The developed theory and expression obtained are essential in interpreting and analyzing spectroscopic data on the secondary emission of coherently coupled quantum systems.

preprint2014arXiv

Ytterbium-driven strong enhancement of electron-phonon coupling in graphene

We present high-resolution angle-resolved photoemission spectroscopy study in conjunction with first principles calculations to investigate how the interaction of electrons with phonons in graphene is modified by the presence of Yb. We find that the transferred charges from Yb to the graphene layer hybridize with the graphene $π$ bands, leading to a strong enhancement of the electron-phonon interaction. Specifically, the electron-phonon coupling constant is increased by as much as a factor of 10 upon the introduction of Yb with respect to as grown graphene ( $\leq$ 0.05). The observed coupling constant constitutes the highest value ever measured for graphene and suggests that the hybridization between graphene and the adatoms might be a critical parameter in realizing superconducting graphene.

preprint2013arXiv

Chemically gated electronic structure of a superconducting doped topological insulator system

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu $_x$ Bi $_2$ Se $_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

preprint2013arXiv

Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi $_2$ Se $_3$ Using Angle-Resolved Photoemission Spectroscopy

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi $_2$ Se $_3$ , by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices.

preprint2013arXiv

Minority-spin $t_{2g}$ states and the degree of spin polarization in ferromagnetic metallic La $_{2-2x}$ Sr $_{1+2x}$ Mn $_2$ O $_7$ ( $x=0.38$ )

Using angle-resolved photoemission spectroscopy (ARPES), we investigate the electronic band structure and Fermi surface of ferromagnetic La $_{2-2x}$ Sr $_{1+2x}$ Mn $_2$ O $_7$ ( $x=0.38$ ). Besides the expected two hole pockets and one electron pocket of majority-spin $e_g$ electrons, we show an extra electron pocket around the $Γ$ point. A comparison with first-principles spin-polarized band-structure calculations shows that the extra electron pocket arises from $t_{2g}$ electrons of minority-spin character, indicating this compound is not a complete half-metallic ferromagnet, with similar expectations for lightly-doped cubic manganites. However, our data suggest that a complete half-metallic state is likely to be reached as long as the bandwidth is mildly reduced. Moreover, the band-resolved capability of ARPES enables us to investigate the band structure effects on spin polarization for different experimental conditions.

preprint2013arXiv

Persistent Coherence and Spin-Polarization of Topological Surface States on Topological Insulators

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices.

preprint2013arXiv

Topological insulator in a Bi-Bi $_2$ Se $_3$ infinitely adaptive superlattice phase

We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi $_2$ Se $_3$ . The compound, based on Bi $_4$ Se $_3$ , is a 1:1 natural superlattice of alternating Bi $_2$ layers and Bi $_2$ Se $_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi $_4$ Se $_{2.6}$ S $_{0.4}$ . The crystals cleave along the interfaces between the Bi $_2$ and Bi $_2$ Se $_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $Γ$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.

preprint2012arXiv

Electron behavior in topological insulator based P-N overlayer interfaces

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi $_2$ Se $_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials.

preprint2012arXiv

Reply to Comment by Calandra et al on "Electronic Structure of Superconducting KC $_8$ and Nonsuperconducting LiC $_6$ Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State"

In their comment Calandra \textit{et al} \cite{Calandra}, assert two points: (1) the estimate of charge transfer from Li to graphene layers in LiC $_6$ in our letter \cite{Pan2011c} is incorrect because of the three dimensional (3D) character of the electronic structure in bulk LiC $_6$ ; (2) our main claim that the superconductivity in graphite intercalation compounds (GICs) is graphene-sheet-driven is therefore invalid.

preprint2012arXiv

Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi $_2$ Se $_3$

Heavily electron-doped surfaces of Bi $_2$ Se $_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering channels opened by electron doping. A detailed analysis of the scattering rates suggests that intra-band scattering dominates with the largest effect coming from warping of the Fermi surface.

preprint2011arXiv

Electronic structure of superconducting KC $_8$ and non-superconducting LiC $_6$ graphite intercalation compounds: Evidence for a graphene-sheet-driven superconducting state

We have performed photoemission studies of the electronic structure in LiC $_6$ and KC $_8$ , a non-superconducting and a superconducting graphite intercalation compound, respectively. We have found that the charge transfer from the intercalant layers to graphene layers is larger in KC $_8$ than in LiC $_6$ , opposite of what might be expected from their chemical composition. We have also measured the strength of the electron-phonon interaction on the graphene-derived Fermi surface to carbon derived phonons in both materials and found that it follows a universal trend where the coupling strength and superconductivity monotonically increase with the filling of graphene $π^{\ast}$ states. This correlation suggests that both graphene-derived electrons and graphene-derived phonons are crucial for superconductivity in graphite intercalation compounds.

preprint2011arXiv

Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization

We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi $_2$ Se $_3$ , a model topological insulator. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of $k_z=Z$ plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, $\sim 0.75$ , much higher than previously reported. Our results demonstrate that the topological surface state on Bi $_2$ Se $_3$ is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic.

preprint2010arXiv

A high-efficiency spin-resolved phototemission spectrometer combining time-of-flight spectroscopy with exchange-scattering polarimetry

We describe a spin-resolved electron spectrometer capable of uniquely efficient and high energy resolution measurements. Spin analysis is obtained through polarimetry based on low-energy exchange scattering from a ferromagnetic thin-film target. This approach can achieve a similar analyzing power (Sherman function) as state-of-the-art Mott scattering polarimeters, but with as much as 100 times improved efficiency due to increased reflectivity. Performance is further enhanced by integrating the polarimeter into a time-of-flight (TOF) based energy analysis scheme with a precise and flexible electrostatic lens system. The parallel acquisition of a range of electron kinetic energies afforded by the TOF approach results in an order of magnitude (or more) increase in efficiency compared to hemispherical analyzers. The lens system additionally features a 90° bandpass filter, which by removing unwanted parts of the photoelectron distribution allows the TOF technique to be performed at low electron drift energy and high energy resolution within a wide range of experimental parameters. The spectrometer is ideally suited for high-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES), and initial results are shown. The TOF approach makes the spectrometer especially ideal for time-resolved spin-ARPES experiments.

preprint2010arXiv

Electron-Hole Asymmetry in Superconductivity of Pnictides Originated from the Observed Rigid Chemical Potential Shift

We have performed a systematic photoemission study of the chemical potential shift as a function of carrier doping in a pnictide system based on BaFe $_2$ As $_2$ . The experimentally determined chemical potential shift is consistent with the prediction of a rigid band shift picture by the renormalized first-principle band calculations. This leads to an electron-hole asymmetry (EHA) in the Fermi surface (FS) nesting condition due to different effective masses for different FS sheets, which can be calculated from the Lindhard function of susceptibility. This built-in EHA from the band structure, which matches well with observed asymmetric superconducting domes in the phase diagram, strongly supports FS near-nesting driven superconductivity in the iron pnictides.

preprint2010arXiv

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009) http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html]. Here we report the first observation of Spin-Momentum Helical Locking and Spin-Vortex structures in Bi2Se3 and Bi2Te3, demonstrate the existence of Topological-Order at 300K and report a material realization of topological-transport-regime for helical Dirac fermions. Our results reveal a one-to-one spin-momentum locked Dirac structure in Bi2Se3 and Bi2Te3 that is nearly 100% spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological-transport-regime. The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K). Our results pave the way for future transport based studies of topological insulators, and possible room temperature applications of protected spin-polarized edge channels we observe with spin-ARPES in spintronic technology. All of these new results are made possible due to the Spin-resolved-ARPES (Mott polarimetric) technique [http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html ] .

preprint2008arXiv

Evolution of Fermi surface and normal-state gap in chemically substituted cuprates Bi $_{2}$ Sr $_{2-x}$ Bi $_{x}$ CuO $_{6+δ}$

We have performed a systematic angle-resolved photoemission study of chemically substituted cuprates Bi $_{2}$ Sr $_{2-x}$ Bi $_{x}$ CuO $_{6+δ}$ . We observed that the Fermi surface area shrinks linearly with Bi substitution content $x$ , reflecting the electron doping nature of this chemical substitution. In addition, the spectral linewidth broadens rapidly with increasing $x$ , and becomes completely incoherent at the superconducting-insulating boundary. The d-wave-like normal-state gap observed in the lightly underdoped region gradually evolves into a large soft gap, which suppresses antinodal spectral weight linearly in both the excitation energy and temperature. Combining with the bulk resistivity data obtained on the same samples, we establish the emergence of the Coulomb gap behavior in the very underdoped regime. Our results reveal the dual roles, doping and disorder, of off-plane chemical substitutions in high- $T_c$ cuprates and elucidate the nature of the quantum electronic states due to strong correlation and disorder.

preprint2008arXiv

Tightly-bound Cooper pair, quasiparticle kinks and clues on the pairing potential in a high Tc FeAs Superconductor

We present a systematic photoemission study of the newly discovered high Tc superconductor class (Sr/Ba)1-xKxFe2As2. By utilizing a unique photon energy range and scattering geometry we resolve the details of the single particle dynamics of interacting electrons on the central Fermi surfaces of this series which shows overall strong coupling behavior (2D/kBTc = 6). Quasiparticle dispersion kinks are observed in a binding energy range of 15 to 50 meV which matches the magnetic excitation energy scales (parameterized by J1,J2). The size of the Cooper pair wavefunction is found to be less than 20A indicating a short in-plane scale uncharacteristic of a BCS-phonon scenario but suggestive of a phase factor in the global order parameter. The kink likely reflects contributions from the strongly frustrated fluctuating spin excitations and the soft phonons around 20-40 meV. Our results provide important clue to the nature of the pairing potential realized in these superconductors.

preprint2006arXiv

A local metallic state in globally insulating $La_{1.24}Sr_{1.76}Mn_2O_7$ well above the metal-insulator transition

Angle-resolved photoemission spectroscopy was used to investigate the evolution of the electronic structure across the metal-insulator transition in bi-layer manganite $La_{1.24}Sr_{1.76}Mn_2O_7$ . We found that this system is a metal for $T<T_C$ , a local metal but global insulator for $T<T_C<T^*$ , and a global insulator for $T>T^*$ . These results indicate the critical role of electronic phase separation and percolation effects for the metal-insulator transition in $La_{1.24}Sr_{1.76}Mn_2O_7$ .

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A. V. Fedorov

Research overview

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29 publications

The nature of ferromagnetism in the chiral helimagnet $Cr_{1/3}NbS_{2}$

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX $_2$ (X = Se and Te)

Disentangling the surface and bulk electronic structures of LaOFeAs

Magnetic effects in sulfur-decorated graphene

Gapped Surface States in a Strong-Topological-Semimetal

Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties

Topological nature of FeSe $_{0.5}$ Te $_{0.5}$ superconductor

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

Hyperfine field assessment of the magnetic structure of ZrZn2

Observation of an electron band above the Fermi level in FeTe $_{0.55}$ Se $_{0.45}$ from \emph{in-situ} surface doping

Observation of the chiral magnetic effect in ZrTe5

Photoluminescence of a quantum-dot molecule

Ytterbium-driven strong enhancement of electron-phonon coupling in graphene

Chemically gated electronic structure of a superconducting doped topological insulator system

Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi $_2$ Se $_3$ Using Angle-Resolved Photoemission Spectroscopy

Minority-spin $t_{2g}$ states and the degree of spin polarization in ferromagnetic metallic La $_{2-2x}$ Sr $_{1+2x}$ Mn $_2$ O $_7$ ( $x=0.38$ )

Persistent Coherence and Spin-Polarization of Topological Surface States on Topological Insulators

Topological insulator in a Bi-Bi $_2$ Se $_3$ infinitely adaptive superlattice phase

Electron behavior in topological insulator based P-N overlayer interfaces

Reply to Comment by Calandra et al on "Electronic Structure of Superconducting KC $_8$ and Nonsuperconducting LiC $_6$ Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State"

Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi $_2$ Se $_3$

Electronic structure of superconducting KC $_8$ and non-superconducting LiC $_6$ graphite intercalation compounds: Evidence for a graphene-sheet-driven superconducting state

Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization

A high-efficiency spin-resolved phototemission spectrometer combining time-of-flight spectroscopy with exchange-scattering polarimetry

Electron-Hole Asymmetry in Superconductivity of Pnictides Originated from the Observed Rigid Chemical Potential Shift

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Evolution of Fermi surface and normal-state gap in chemically substituted cuprates Bi $_{2}$ Sr $_{2-x}$ Bi $_{x}$ CuO $_{6+δ}$

Tightly-bound Cooper pair, quasiparticle kinks and clues on the pairing potential in a high Tc FeAs Superconductor

A local metallic state in globally insulating $La_{1.24}Sr_{1.76}Mn_2O_7$ well above the metal-insulator transition

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A. V. Fedorov

Research overview

Is this your work?

29 publications

The nature of ferromagnetism in the chiral helimagnet Cr1/3NbS2Cr_{1/3}NbS_{2}Cr1/3​NbS2​

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2_22​ (X = Se and Te)

Disentangling the surface and bulk electronic structures of LaOFeAs

Magnetic effects in sulfur-decorated graphene

Gapped Surface States in a Strong-Topological-Semimetal

Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties

Topological nature of FeSe0.5_{0.5}0.5​Te0.5_{0.5}0.5​ superconductor

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

Hyperfine field assessment of the magnetic structure of ZrZn2

Observation of an electron band above the Fermi level in FeTe0.55_{0.55}0.55​Se0.45_{0.45}0.45​ from \emph{in-situ} surface doping

Observation of the chiral magnetic effect in ZrTe5

Photoluminescence of a quantum-dot molecule

Ytterbium-driven strong enhancement of electron-phonon coupling in graphene

Chemically gated electronic structure of a superconducting doped topological insulator system

Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2_22​Se3_33​ Using Angle-Resolved Photoemission Spectroscopy

Minority-spin t2gt_{2g}t2g​ states and the degree of spin polarization in ferromagnetic metallic La2−2x_{2-2x}2−2x​Sr1+2x_{1+2x}1+2x​Mn2_22​O7_77​ (x=0.38x=0.38x=0.38)

Persistent Coherence and Spin-Polarization of Topological Surface States on Topological Insulators

Topological insulator in a Bi-Bi2_22​Se3_33​ infinitely adaptive superlattice phase

Electron behavior in topological insulator based P-N overlayer interfaces

Reply to Comment by Calandra et al on "Electronic Structure of Superconducting KC8_88​ and Nonsuperconducting LiC6_66​ Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State"

Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi2_22​Se3_33​

Electronic structure of superconducting KC8_88​ and non-superconducting LiC6_66​ graphite intercalation compounds: Evidence for a graphene-sheet-driven superconducting state

Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization

A high-efficiency spin-resolved phototemission spectrometer combining time-of-flight spectroscopy with exchange-scattering polarimetry

Electron-Hole Asymmetry in Superconductivity of Pnictides Originated from the Observed Rigid Chemical Potential Shift

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Evolution of Fermi surface and normal-state gap in chemically substituted cuprates Bi2_{2}2​Sr2−x_{2-x}2−x​Bix_{x}x​CuO6+δ_{6+δ}6+δ​

Tightly-bound Cooper pair, quasiparticle kinks and clues on the pairing potential in a high Tc FeAs Superconductor

A local metallic state in globally insulating La1.24Sr1.76Mn2O7La_{1.24}Sr_{1.76}Mn_2O_7La1.24​Sr1.76​Mn2​O7​ well above the metal-insulator transition

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The nature of ferromagnetism in the chiral helimagnet $Cr_{1/3}NbS_{2}$

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX $_2$ (X = Se and Te)

Topological nature of FeSe $_{0.5}$ Te $_{0.5}$ superconductor

Observation of an electron band above the Fermi level in FeTe $_{0.55}$ Se $_{0.45}$ from \emph{in-situ} surface doping

Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi $_2$ Se $_3$ Using Angle-Resolved Photoemission Spectroscopy

Minority-spin $t_{2g}$ states and the degree of spin polarization in ferromagnetic metallic La $_{2-2x}$ Sr $_{1+2x}$ Mn $_2$ O $_7$ ( $x=0.38$ )

Topological insulator in a Bi-Bi $_2$ Se $_3$ infinitely adaptive superlattice phase

Reply to Comment by Calandra et al on "Electronic Structure of Superconducting KC $_8$ and Nonsuperconducting LiC $_6$ Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State"

Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi $_2$ Se $_3$

Electronic structure of superconducting KC $_8$ and non-superconducting LiC $_6$ graphite intercalation compounds: Evidence for a graphene-sheet-driven superconducting state

Evolution of Fermi surface and normal-state gap in chemically substituted cuprates Bi $_{2}$ Sr $_{2-x}$ Bi $_{x}$ CuO $_{6+δ}$

A local metallic state in globally insulating $La_{1.24}Sr_{1.76}Mn_2O_7$ well above the metal-insulator transition